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NSBC123JPDXV6T1G

P1-P3P4-P6P7-P9P10-P10
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
www.onsemi.com
4
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
010 20304050
75°C
25°C
−25°C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
6543210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
75°C
25°C
T
A
= −25°C
75°C
25°C
T
A
= −25°C
75°C
25°C
T
A
= −25°C
0.01
0.01
0.1
30
100
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
www.onsemi.com
5
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5335DW1, NSBC123JPDXV6
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
7
010 20304050
150°C
25°C
−55°C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
1000101
1000
10
1
0.01
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
43210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
0.01
0.1
30
100
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
150°C
−55°C
6
5
4
3
2
1
0
25°C
−55°C
150°C
25°C
−55°C
150°C
100
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC123JPDP6
150°C
25°C
−55°C
Figure 12. V
CE(sat)
vs. I
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 16. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
1000101
1000
10
1
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
100
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
0.01
0.01
0.1
30
100
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
−55°C
25°C
150°C
2.4
2
1.6
1.2
0.8
0.4
0
25°C
−55°C
150°C
0 0.5 1 1.5 2 2.5 3
100
25°C
150°C
−55°C
100
P1-P3P4-P6P7-P9P10-P10

NSBC123JPDXV6T1G

Mfr. #:
Buy NSBC123JPDXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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