NSBC123JPDXV6T1G

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
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7
TYPICAL CHARACTERISTICS PNP TRANSISTOR
NSBC123JPDP6
150°C
25°C
55°C
Figure 17. V
CE(sat)
vs. I
C
Figure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 21. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
100101
1000
10
1
V
CE(sat)
, COLLECTOREMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
100
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
0.01
0.01
0.1
30
100
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
55°C
25°C
150°C
7
25°C
55°C
150°C
01 2 3
100
25°C
150°C
55°C
0.1
6
5
4
3
2
1
0
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
www.onsemi.com
8
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd
M
123
A1
A
c
654
E
b
6X
DIM MIN NOM MAX
MILLIMETERS
A −−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b 0.15 0.20 0.25
C 0.08 0.15 0.22
D 1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A
E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc
C
A2
6X
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6
www.onsemi.com
9
PACKAGE DIMENSIONS
H
E
DIM MIN NOM MAX
MILLIMETERS
A 0.50 0.55 0.60
b 0.17 0.22 0.27
C
D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT563, 6 LEAD
CASE 463A
ISSUE G
e
M
0.08 (0.003) X
b
6 5 PL
A
C
X
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒ
mm
inches
Ǔ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
0.08 0.12 0.18 0.003 0.005 0.007

NSBC123JPDXV6T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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