BYV34X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 13 September 2007 2 of 9
NXP Semiconductors
BYV34X-600
Dual rectifier diode ultrafast
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
BYV34X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220 ‘full pack’
SOT186A
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage square waveform; δ = 1.0; T
h
≤ 100 °C - 600 V
I
O(AV)
average output current square waveform; δ = 0.5; T
h
≤ 44 °C; both
diodes conducting
-20A
I
FRM
repetitive peak forward current t = 25 µs; square waveform; δ = 0.5;
T
h
≤ 44 °C; per diode
-20A
I
FSM
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per diode - 120 A
t = 8.3 ms; sinusoidal waveform; per diode - 132 A
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 150 °C
