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BYV34X-600,127

P1-P3P4-P6P7-P9P10-P10
BYV34X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 13 September 2007 3 of 9
NXP Semiconductors
BYV34X-600
Dual rectifier diode ultrafast
5. Thermal characteristics
6. Isolation characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance from junction to
heatsink
with heatsink compound;
per diode; see
Figure 1
- - 5.0 K/W
with heatsink compound;
both diodes conducting
- - 4.0 K/W
without heatsink compound;
per diode
- - 7.0 K/W
R
th(j-a)
thermal resistance from junction to
ambient
in free air - 55 - K/W
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
001aaf033
1
10
−1
10
Z
th(j-h)
(K/W)
10
−3
10
−2
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
Table 5. Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity ≤ 65 %; clean and dust free
- - 2500 V
C
isol
isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF
BYV34X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 13 September 2007 4 of 9
NXP Semiconductors
BYV34X-600
Dual rectifier diode ultrafast
7. Characteristics
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 10 A; T
j
= 150 °C; see Figure 2 - 0.92 1.16 V
I
F
= 10 A; see Figure 2 - 1.07 1.36 V
I
R
reverse current V
R
= 600 V - 10 50 µA
V
R
= 600 V; T
j
= 100 °C - 0.2 0.6 mA
Dynamic characteristics
Q
r
recovered charge I
F
= 2 A to V
R
≥ 30 V; dI
F
/dt=20A/µs;
see
Figure 3
- 4070nC
t
rr
reverse recovery time I
F
=1AtoV
R
≥ 30 V; dI
F
/dt = 100 A/µs;
see
Figure 3
- 5060ns
I
RM
peak reverse recovery
current
I
F
= 10 A to V
R
≥ 30 V; dI
F
/dt=50A/µs;
T
j
= 100 °C; see Figure 3
- 35A
V
FR
forward recovery
voltage
I
F
= 10 A; dI
F
/dt=10A/µs; see Figure 4 - 3.2 - V
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
=25°C; maximum values
Fig 2. Forward current as a function of forward voltage
003aab485
0
5
10
15
20
25
30
0 0.4 0.8 1.2 1.6
V
F
(V)
I
F
(A)
(1) (2) (3)
BYV34X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 13 September 2007 5 of 9
NXP Semiconductors
BYV34X-600
Dual rectifier diode ultrafast
Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions
001aab911
t
rr
time
100 %
10 %
I
F
−dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FR
V
F
I
F
V
F
I
F(AV)
=I
F(RMS)
×√δ a = form factor = I
F(RMS)
/I
F(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aab483
0
3
6
9
12
15
18
0 5 10 15
I
F(AV)
(A)
P
tot
(W)
δ = 1
0.5
0.2
0.1
003aab484
0
2
4
6
8
10
12
0369
I
F(AV)
(A)
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
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BYV34X-600,127

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Buy BYV34X-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 20A
Lifecycle:
New from this manufacturer.
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