BUK661R9-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 18 August 2010 7 of 15
NXP Semiconductors
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
-0.81.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-63-ns
Q
r
recovered charge - 127 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aae251
0
50
100
150
200
250
0 20406080100
I
D
(A)
g
fs
(S)
003aae250
0
2
4
6
8
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
003aae248
0
20
40
60
80
100
0 0.2 0.4 0.6 0.8 1
V
DS
(V)
I
D
(A)
3.8
4
5
3.3
10
V
GS
(V) = 3.2
3.4
3.6
003aae249
0
20
40
60
80
01234
V
GS
(V)
I
D
(A)
T
j
= 25
°
CT
j
= 175
°
C