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VN5R003H-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
VN5R003H-E Electrical specifications
Doc ID 17602 Rev 6 7/20
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Ta ble 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions in table below for extended periods may affect device reliability.
I
S
I
D
V
S
V
D
I
N
V
IN
V
D
V
CC
SOURCE
DRAIN
IN
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
S
Source power terminal DC voltage (reverse battery mode) -16 to 41 V
I
S,
I
D
Source or Drain current 60 A
-I
S,
-I
D
Reverse currents 60 A
E
MAX
Inductive clamp energy
L = 2 mH, V
D
= 0 V, IN open, I
S
< 0, T
jstart
= 25°C
0.9 J
V
ESD
Electrostatic discharge
(Human Body Model: R = 1.5 KΩ; C = 100 pF)
- All terminals
5000 V
V
ESD
Charge device model (CDM-AEC-Q100-011) 1000 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Electrical specifications VN5R003H-E
8/20 Doc ID 17602 Rev 6
2.2 Thermal data
2.3 Electrical characteristics
Table 4. Thermal data
Symbol Parameter Max. Unit
R
thj-case
Thermal resistance junction-case 0.5 °C/W
R
thj-amb
Thermal resistance junction-ambient (mounted on FR4
using 6 cm
2
copper pad)
42 °C/W
Table 5. Power section for reverse battery mode
(1)
1. Operating conditions: 40°C < T
j
< 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
S
Operating supply voltage — -16 13 28 V
V
CLPDS
Drain-Source clamp
voltage
V
D
= 0 V, IN open, I
S
=-5A 17 23 V
V
CLPDIN
Drain input clamp
voltage
V
IN
=0V, I
D
=20mA 41 52 V
V
F
Source drain voltage IN = open, I
S
= 10 A; T
j
=25°C 0.85 V
R
ON
On state resistance
between SOURCE and
Drain terminals
I
S
= 10 A; T
j
=25°C;
8V<V
CC
<28V
3
mΩ
I
S
= 10 A; T
j
= 150°C;
8V<V
CC
<28V
5.5
I
IN
Input current V
S
= 13 V , V
IN
= 0 V 2 3 mA
I
IN
(REV)
Reverse input current V
S
= -16 V, V
IN
= 0 V -2 0 mA
I
OUT_rev
Output reverse current V
S
= -16 V, V
D
= 0 V, IN open -1.5 -0.5 mA
VN5R003H-E Electrical specifications
Doc ID 17602 Rev 6 9/20
Table 6. Electrical transient requirements (part 1)
ISO 7637-2:
2004(E)
Test pulse
Test levels
(1)
1. The above test levels must be considered referred to V
CC
= 13.5 V except for pulse 5b.
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
Impedance
III IV Min. Max.
1
(2)
2. The device does not turn Off once the ISO pulse is applied.
-75 V -100 V 5000 pulses 0.5 s 5 s 2 ms, 10 Ω
2a +37 V +50 V 5000 pulses 0.2 s 5 s 50 µs, 2 Ω
3a -100 V -150 V 1h 90 ms 100 ms 0.1 µs, 50 Ω
3b +75 V +100 V 1h 90 ms 100 ms 0.1 µs, 50 Ω
4 -6 V -7 V 1 pulse — 100 ms, 0.01 Ω
5b
(3)
3. Valid in case of external load dump clamp: 40 V maximum referred to ground.
+65 V +87 V 1 pulse — 400 ms, 2 Ω
Table 7. Electrical transient requirements (part 2)
ISO 7637-2:
2004(E)
Test pulse
Test level results
(1)
1. Transient pulses have been applied with the INPUT pin grounded with R1>5Ω.
III IV
1C C
2a C C
3a C C
3b C C
4C C
5b
(2)
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
CC
Table 8. Electrical transient requirements (part 3)
Class Contents
C All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
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VN5R003H-E

Mfr. #:
Buy VN5R003H-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution 3mOhm Reverse Battery Prot Switch
Lifecycle:
New from this manufacturer.
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