STP9NK65Z, STP9NK65ZFP Electrical ratings
Doc ID 8981 Rev 4 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 650 V
V
GS
Gate- source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 6.4 6.4
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100 °C 4 4
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 25.6 25.6
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 125 30 W
Derating factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) 4000 V
dv/dt
(3)
3. I
SD
≤ 6.4 A, di/dt ≤ 200 A/µs, V
DD
≤ 80%V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) - 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150
-55 to 150
°C
°C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max 1 4.2 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j max
)
6.4 A
E
AS
Single pulse avalanche energy
(starting T
j
=25 °C, I
D
=I
AR
, V
DD
=50 V)
200 mJ
