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STP9NK65Z

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STP9NK65Z, STP9NK65ZFP
4/16 Doc ID 8981 Rev 4
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
(V
GS
= 0)
I
D
= 1 mA 650 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, @125 °C
1
50
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 3.2 A 1 1.2 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward
transconductance
V
DS
= 15 V
,
I
D
= 3.2 A - 6 - S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
1145
130
28
-
pF
pF
pF
C
oss eq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0, V
DS
= 0 to 400 V - 55 - pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 520 V, I
D
= 6.4 A,
V
GS
= 10 V
(see Figure 3)
-
41
7.5
22
-
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 325 V, I
D
= 3.2 A
R
G
=4.7 Ω V
GS
= 10 V
(see Figure 2)
-
20
12
-
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 325 V, I
D
= 3.2 A
R
G
=4.7 Ω V
GS
= 10 V
(See Figure 2)
-
45
15
-
ns
ns
STP9NK65Z, STP9NK65ZFP Electrical characteristics
Doc ID 8981 Rev 4 5/16
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
6.4
25.6
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 6.4 A, V
GS
= 0 - 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6.4 A,
di/dt = 100 A/µs
V
DD
= 50 V, T
j
= 150 °C
(see Figure 4)
-
400
2600
13
ns
nC
A
Table 9. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30 - - V
Test circuits STP9NK65Z, STP9NK65ZFP
6/16 Doc ID 8981 Rev 4
3 Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped Inductive load test
circuit
Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STP9NK65Z

Mfr. #:
Buy STP9NK65Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
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New from this manufacturer.
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