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STGP8NC60K

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
October 2007 Rev 1 1/17
17
STGB8NC60K - STGD8NC60K
STGP8NC60K
N-channel 600V - 8A - D
2
PAK / DPAK / TO-220
Short circuit rated PowerMESH™ IGBT
Features
■ Lower on voltage drop (V
cesat
)
■ Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short circuit withstand time 10µs
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
Figure 1. Internal schematic diagram
Type V
CES
V
CE(sat)
Typ
@25°C
I
C
@100°C
STGB8NC60K 600V 2.2V 8A
STGD8NC60K 600V 2.2V 8A
STGP8NC60K 600V 2.2V 8A
TO-220
D
²
PAK
1
2
3
1
3
1
3
DPAK
Table 1. Device summary
Order codes Marking Package Packaging
STGB8NC60K GB8NC60K D²PAK Tape & reel
STGD8NC60K GD8NC60K DPAK Tape & reel
STGP8NC60K GP8NC60K TO-220 Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents STGB8NC60K - STGD8NC60K - STGP8NC60K
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Obsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K - STGP8NC60K Electrical ratings
3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK/TO-220 DPAK
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25°C
15 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C
8A
I
CP
(2)
2. Pulse width limited by max junction temperature
Pulsed collector current 30 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C
65 62 W
T
j
Operating junction temperature – 55 to 150 °C
T
scw
Short circuit withstand time
10 µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max
TO-220 / D²PAK 1.9 °C/W
DPAK 2.0 °C/W
Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W
I
C
T
C
()
T
JMAX
T
C
–
R
THJ C–
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STGP8NC60K

Mfr. #:
Buy STGP8NC60K
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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