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STGP8NC60K

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
STGB8NC60K - STGD8NC60K - STGP8NC60K Electrical characteristics
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Figure 8. Normalized gate threshold voltage
vs temperature
Figure 9. Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics STGB8NC60K - STGD8NC60K - STGP8NC60K
8/17
Figure 14. Thermal impedance for TO-220/
D²PAK
Figure 15. Turn-off SOA
Figure 16. Thermal impedance for DPAK
Obsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K - STGP8NC60K Test circuit
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3 Test circuit
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform Figure 20. Diode recovery time waveform
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STGP8NC60K

Mfr. #:
Buy STGP8NC60K
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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