AS7C1025C
12/5/06, v. 1.0 Alliance Memory P. 6 of 9
®
Write waveform 2 (CE controlled)
10,11
AC test conditions
Notes:
1 During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
2 This parameter is sampled, but not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A and B.
4t
CLZ
and t
CHZ
are specified with CL = 5 pF, as in Figure B. Transition is measured ±200 mV from steady-state voltage.
5 This parameter is guaranteed, but not 100% tested.
6
WE
is high for read cycle.
7
CE
and
OE
are low for read cycle.
8 Address is valid prior to or coincident with
CE
transition low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
t
DH
t
AH
t
WZ
t
WC
t
AS
Data valid
D
IN
t
WR
– Output load: see Figure B.
– Input pulse level: GND to 30 V. See Figure A.
– Input rise and fall times: 3 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
168
Ω
Thevenin equivalent:
D
OUT
+1.728 V
255
Ω
C
13
480
Ω
D
OUT
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
3 ns
