Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
PBSS4160X All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 23 May 2017 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 7 V
I
C
collector current - 1 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - 2 A
I
B
base current - 300 mA
I
BM
peak base current single pulse; t
p
≤ 1 ms - 1 A
[1] - 500 mW
[2] - 950 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[3] - 1.35 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
T
amb
(°C)
-75 17512525 75-25
aaa-026758
0.6
0.9
0.3
1.2
1.5
P
tot
(W)
0
(1)
(2)
(3)
(1) FR4 PCB, single-sided copper, 6 cm
2
(2) FR4 PCB, single-sided copper, 1 cm
2
(3) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
