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BYW29E-200,127

P1-P3P4-P6P7-P9P10-P11
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO-
220AC
BYW29E-200
Ultrafast power diode
17 September 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
Fast switching
•
Guaranteed ESD capability
•
High thermal cycling performance
•
Low on-state loss
•
Low thermal resistance
•
Rugged: reverse voltage surge capability
•
Soft recovery minimizes power-consuming oscillations
3. Applications
•
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 200 V
I
F(AV)
average forward
current
SQW; δ = 0.5 ; T
mb
≤ 128 °C; Fig. 1;
Fig. 2
- - 8 A
Static characteristics
V
F
forward voltage I
F
= 8 A; T
j
= 150 °C; Fig. 4 - 0.8 0.895 V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C; ramp recovery; Fig. 5; Fig. 7
- 20 25 ns
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ - - 8 kV
NXP Semiconductors
BYW29E-200
Ultrafast power diode
BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 17 September 2013 2 / 10
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb mb mounting base; cathode
mb
1 2
TO-220AC (SOD59)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYW29E-200 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 200 V
V
RWM
crest working reverse voltage - 200 V
V
R
reverse voltage - 200 V
I
F(AV)
average forward current SQW; δ = 0.5 ; T
mb
≤ 128 °C; Fig. 1;
Fig. 2
- 8 A
I
FRM
repetitive peak forward current SQW; δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 128 °C - 16 A
SIN; t
p
= 8.3 ms; T
j(init)
= 25 °C - 88 AI
FSM
non-repetitive peak forward
current
SIN; t
p
= 10 ms; T
j(init)
= 25 °C - 80 A
I
RRM
repetitive peak reverse current δ = 0.001 ; t
p
= 2 µs - 0.2 A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
P1-P3P4-P6P7-P9P10-P11

BYW29E-200,127

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers FAST REC 8A 200V
Lifecycle:
New from this manufacturer.
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