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BYW29E-200,127

P1-P3P4-P6P7-P9P10-P11
NXP Semiconductors
BYW29E-200
Ultrafast power diode
BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 17 September 2013 3 / 10
Symbol Parameter Conditions Min Max Unit
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ - 8 kV
003aaj507
I
F(AV)
(A)
0 1284
4
8
12
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
I
F(AV)
(A)
0 862 4
003aaj508
4
2
6
8
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 3 - - 2.7 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors
BYW29E-200
Ultrafast power diode
BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 17 September 2013 4 / 10
003aaj513
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
t
p
(s)
10
-6
1 1010
-1
10
-2
10
-5
10
-3
10
-4
t
p
t
p
T
P
t
T
δ =
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
F
= 8 A; T
j
= 25 °C; Fig. 4 - 0.92 1.05 V
I
F
= 20 A; T
j
= 25 °C; Fig. 4 - 1.1 1.3 V
V
F
forward voltage
I
F
= 8 A; T
j
= 150 °C; Fig. 4 - 0.8 0.895 V
V
R
= 200 V; T
j
= 25 °C - 2 10 µAI
R
reverse current
V
R
= 200 V; T
j
= 100 °C - 0.2 0.6 mA
Dynamic characteristics
Q
r
recovered charge I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/s;
T
j
= 25 °C; Fig. 5; Fig. 6
- 4 11 nC
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/s;
T
j
= 25 °C; ramp recovery; Fig. 5; Fig. 7
- 20 25 nst
rr
reverse recovery time
I
F
= 0.5 A; I
R
= 1 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C; step recovery; Fig. 8
- 15 20 ns
V
FRM
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/s; T
j
= 25 °C;
Fig. 9
- 1 - V
NXP Semiconductors
BYW29E-200
Ultrafast power diode
BYW29E-200 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 17 September 2013 5 / 10
V
F
(V)
0 21.50.5 1
003aaj509
10
20
30
I
F
(A)
0
(1) (2) (3)
Fig. 4. Forward current as a function of forward
voltage
Fig. 5. Reverse recovery definitions; ramp recovery
003aaj510
10
2
10
10
3
Q
r
(nC)
1
dI
F
1 10
2
10
(1)
(2)
(3)
(4)
Fig. 6. Recovered charge as a function of rate of
change of forward current; maximum values
003aaj511
10
2
10
10
3
t
rr
(ns)
1
dI
F
1 10
2
10
(1)
(2)
Fig. 7. Reverse recovery time as a function of rate of
change of forward current; maximum values
P1-P3P4-P6P7-P9P10-P11

BYW29E-200,127

Mfr. #:
Buy BYW29E-200,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers FAST REC 8A 200V
Lifecycle:
New from this manufacturer.
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