IXTK200N10L2

© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 100 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 100 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C (Chip Capability) 200 A
I
LRMS
Lead Current Limit, (RMS) 160 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
500 A
I
A
T
C
= 25°C 100 A
E
AS
T
C
= 25°C5 J
P
D
T
C
= 25°C 1040 W
T
J
-55...+150 °C
T
JM
150 °C
T
stg
-55...+150 °C
T
L
1.6mm (0.063 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (IXTK) 1.13/10 Nm/lb.in.
F
C
Mounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 3mA 2.0 4.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 10 μA
T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 11 mΩ
Linear L2
TM
Power
MOSFET w/ Extended
FBSOA
IXTK200N10L2
IXTX200N10L2
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
V
DSS
= 100V
I
D25
= 200A
R
DS(on)
< 11m
ΩΩ
ΩΩ
Ω
DS100239(2/10)
Advance Technical Information
Features
z
Designed for Linear Operation
z
Avalanche Rated
z
Guaranteed FBSOA at 75°C
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
Solid State Circuit Breakers
z
Soft Start Controls
z
Linear Amplifiers
z
Programmable Loads
z
Current Regulators
G = Gate D = Drain
S = Source Tab = Drain
TO-264 (IXTK)
G
D
S
G
D
S
PLUS247(IXTX)
Tab
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK200N10L2
IXTX200N10L2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 73 90 S
C
iss
23 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 3200 pF
C
rss
610 pF
t
d(on)
40 ns
t
r
225 ns
t
d(off)
127 ns
t
f
27 ns
Q
g(on)
540 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
115 nC
Q
gd
226 nC
R
thJC
0.12 °C/W
R
thCS
0.15 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 100V, I
D
= 6.25A, T
C
= 75°C, tp = 5s 625 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 A
I
SM
Repetitive, Pulse Width Limited by T
JM
800 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
245 ns
I
RM
24.4 A
Q
RM
3.0 μC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
I
F
= 100A, -di/dt = 100A/μs,
V
R
=
50V, V
GS
= 0V
TO-264 (IXTK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
1 - Gate
2 - Drain
3 - Source
4 - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247
TM
(IXTX) Outline
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK200N10L2
IXTX200N10L2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
7
V
8
V
6
V
4
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
6
V
8
V
7
V
12
V
10
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
10V
4
V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50-250 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200A
I
D
= 100A
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value vs.
Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
20V
- - - -
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit

IXTK200N10L2

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET L2 Linear Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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