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IXTK200N10L2
P1-P3
P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK200N10L2
IXTX200N10L2
Fig
. 12. M
axi
m
um
T
ransi
ent T
her
m
al Im
ped
ance
0.001
0.010
0.100
1.000
0.00001
0.0001
0.
001
0.
01
0.1
1
10
Puls
e W
idt
h -
Se
co
nds
Z
(th)JC
- ºC /
W
Fig. 12. M
a
xim
um
T
rans
ient
T
herm
a
l
Im
pe
dance
ggg
0.200
Fig. 7
. Input
Admitta
nce
0
20
40
60
80
100
120
140
160
180
200
3.5
4.
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.
0
V
GS
- V
ol
t
s
I
D
- Ampere
s
T
J
= 125ºC
2
5º
C
- 4
0º
C
Fi
g.
8. T
r
anscon
du
ctance
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
14
0
160
180
200
2
20
I
D
- Am
p
eres
g
f s
- Si
emens
T
J
= - 40º
C
25ºC
125ºC
Fig. 9. Forw
ard Volta
ge Drop of
Intrins
ic Diode
0
40
80
120
160
200
240
280
320
0.3
0.4
0.5
0
.6
0.7
0.8
0.9
1.0
1.1
1
.2
1.3
1.4
V
SD
- V
ol
t
s
I
S
- Ampere
s
T
J
= 125ºC
T
J
= 25
ºC
Fi
g.
10. Gate C
harg
e
0
2
4
6
8
10
12
14
16
0
100
200
300
400
5
00
600
700
800
Q
G
- Nan
oCou
lo
mb
s
V
GS
- Volt
s
V
DS
= 50V
I
D
= 100A
I
G
= 10
mA
Fig. 11
. Capac
itanc
e
100
1,000
10,
000
100,000
0
5
10
15
20
25
30
35
40
V
DS
- Vol
t
s
Capa
cit
anc
e - P
ico
Farads
f
= 1 MH
z
C
iss
C
rss
C
oss
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK200N10L2
IXTX200N10L2
IXYS REF: T_200N10L2(9R)1-26-10
Fi
g. 1
3. Fo
rward
-Bi
as Safe Oper
ating
Area
@ T
C
= 25ºC
1
10
100
1,000
1
10
100
V
DS
- V
ol
ts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on
)
Lim
it
10ms
DC
100ms
Ex
t
ernal
Lead Limit
Fi
g. 1
4. Fo
rward
-Bi
as Safe Oper
ating
Area
@ T
C
= 75ºC
1
10
100
1,000
1
10
100
V
DS
- Vo
l
ts
I
D
- Am
peres
T
J
= 150ºC
T
C
= 75ºC
Single Pu
ls
e
25µs
1ms
100µs
R
DS(on
)
Lim
it
100ms
10ms
DC
P1-P3
P4-P5
IXTK200N10L2
Mfr. #:
Buy IXTK200N10L2
Manufacturer:
Littelfuse
Description:
MOSFET L2 Linear Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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IXTK200N10L2
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