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Z0107NN0,135

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
S
O
T
2
2
3
Z0107NN0
4Q Triac
4 April 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-
mountable plastic package intended for applications requiring enhanced immunity to
noise and direct interfacing to logic level ICs and low power gate drivers.
2. Features and benefits
•
Direct interfacing to logic level ICs
•
Enhanced current surge capability
•
Enhanced noise immunity
•
High blocking voltage capability
•
Planar passivated for voltage ruggedness and reliability
•
Surface-mountable package
•
Triggering in all four quadrants
•
Very sensitive gate
3. Applications
•
General purpose low power motor control
•
Home appliances
•
Industrial process control
•
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 12.5 A
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
0.3 - 5 mA
NXP Semiconductors
Z0107NN0
4Q Triac
Z0107NN0 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 April 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
0.3 - 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
0.3 - 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 9
0.3 - 7 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
1 32
4
SC-73 (SOT223)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
Z0107NN0 SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number Marking code
Z0107NN0 107NN0
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
- 1 A
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Z0107NN0,135

Mfr. #:
Buy Z0107NN0,135
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800 V 1 A SOT223
Lifecycle:
New from this manufacturer.
Delivery:
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