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Z0107NN0,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
Z0107NN0
4Q T
riac
Z0107NN0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 April 2014
6 / 13
0
0
3
a
a
c
2
1
0
1
0
-
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 6.
T
ransient thermal impedance from junction to solder point as a junction of pulse width
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 7.
Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 8.
Printed circuit board pad area: SOT223
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
0.3
-
5
mA
NXP Semiconductors
Z0107NN0
4Q T
riac
Z0107NN0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 April 2014
7 / 13
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
0.3
-
5
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
0.3
-
5
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 9
0.3
-
7
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 10
-
-
10
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 10
-
-
25
mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 10
-
-
10
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 10
-
-
10
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 1
1
-
-
10
mA
V
T
on-state voltage
I
T
= 1.4 A; T
j
= 25 °C;
Fig. 12
-
1.3
1.6
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
-
-
1
V
V
GT
gate trigger voltage
V
D
= 800 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.2
-
-
V
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
-
-
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 1
10 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 14
100
-
-
V/µs
dV
com
/dt
rate of change of
commutating voltage
V
D
= 400 V; T
j
= 1
10 °C; dI
com
/
dt = 0.44 A/ms; gate open circuit
1
-
-
V/µs
NXP Semiconductors
Z0107NN0
4Q T
riac
Z0107NN0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 April 2014
8 / 13
T
j
(°C)
-50
150
100
0
50
003aaa205
2
1
3
4
0
I
GT(25°C)
I
GT
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 9.
Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aaa203
1
2
3
0
I
L
I
L(25°C)
Fig. 10.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
003aaa204
1
2
3
0
I
H(25°C)
I
H
Fig. 1
1.
Normalized holding current as a function of
junction temperature
003aac258
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V
T
(V)
I
T
(A)
(1)
(2)
(3)
V
o
= 1.13 V
R
s
= 0.31 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 12.
On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Z0107NN0,135
Mfr. #:
Buy Z0107NN0,135
Manufacturer:
WeEn Semiconductors
Description:
Triacs 800 V 1 A SOT223
Lifecycle:
New from this manufacturer.
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