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IXXX200N60C3

P1-P3P4-P6
© 2013 IXYS CORPORATION, All Rights Reserved
XPT
TM
600V IGBTs
GenX3
TM
IXXK200N60C3
IXXX200N60C3
V
CES
= 600V
I
C110
= 200A
V
CE(sat)



2.1V
t
fi(typ)
= 80ns
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 600 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1M 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (Chip Capability) 340 A
I
LRMS
Terminal Current Limit 160 A
I
C110
T
C
= 110°C 200 A
I
CM
T
C
= 25°C, 1ms 900 A
I
A
T
C
= 25°C 100 A
E
AS
T
C
= 25°C 1 J
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 1 I
CM
= 400 A
(RBSOA) Clamped Inductive Load @V
CE
V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA) R
G
= 10, Non Repetitive
P
C
T
C
= 25°C 1630 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
DS100373B(11/13)
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.5 6.0 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 50 A
T
J
= 150C 3 mA
I
GES
V
CE
= 0V, V
GE
= 20V 200 nA
V
CE(sat)
I
C
= 100A, V
GE
= 15V, Note 1 1.60 2.10 V
T
J
= 150C 1.93 V
Features
International Standard Packages
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 27 45 S
C
ie
s
9900 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 570 pF
C
res
185 pF
Q
g(on)
315 nC
Q
ge
I
C
= 200A, V
GE
= 15V, V
CE
= 0.5 • V
CES
134 nC
Q
gc
98 nC
t
d(on)
47 ns
t
ri
100 ns
E
on
3.0 mJ
t
d(off)
125 ns
t
fi
80 ns
E
of
f
1.7 2.6 mJ
t
d(on)
47 ns
t
ri
96 ns
E
on
4.0 mJ
t
d(off)
150 ns
t
fi
90 ns
E
off
2.1 mJ
R
thJC
0.092 °C/W
R
thCS
0.15 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Inductive load, T
J
= 150°C
I
C
= 100A, V
GE
= 15V
V
CE
= 360V, R
G
= 1
Note 2
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
V
CE
= 360V, R
G
= 1
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247
TM
Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK200N60C3
IXXX200N60C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
0 0.4 0.8 1.2 1.6 2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
10
V
8
V
7
V
9V
12
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15
V
10
V
11
V
12
V
8
V
7
V
9
V
13
V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
50
100
150
200
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
12
V
10
V
8
V
9
V
7
V
6
V
11
V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 100
A
I
C
= 150
A
I
C
= 200
A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 200
A
T
J
= 25ºC
100
150
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
P1-P3P4-P6

IXXX200N60C3

Mfr. #:
Buy IXXX200N60C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
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