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IXXX200N60C3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
Fig. 7
.
Trans
condu
ct
ance
0
10
20
30
40
50
60
70
80
90
100
110
0
20
40
60
80
100
120
140
160
180
200
I
C
- Am
p
eres
g
f s
-
Si
emens
T
J
= -
40ºC, 25ºC,
150ºC
Fi
g.
10. R
everse-Bi
as Safe Operatin
g
Area
0
100
200
300
400
100
200
300
400
500
6
00
V
CE
- Vo
l
ts
I
C
- Amper
es
T
J
= 150ºC
R
G
= 1
Ω
dv
/ dt
<
10V /
n
s
Fig. 8. Ga
te
Charge
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
Q
G
-
N
a
no
C
o
ulo
mbs
V
GE
- Volt
s
V
CE
= 300V
I
C
= 20
0A
I
G
= 10m
A
Fig. 9. Capac
ita
nce
100
1,000
10,000
100,000
0
5
10
15
20
25
30
35
40
V
CE
- Vo
l
t
s
Ca
pacit
ance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fi
g.
12. M
axim
u
m
T
ran
sien
t T
her
m
al I
m
p
edan
ce
0.0001
0.001
0.01
0.1
0.00001
0.
0001
0.001
0.01
0.1
1
10
Puls
e
W
i
dth -
Se
c
o
nds
Z
(th)JC
-
ºC
/ W
Fi
g.
11. F
or
ward
-Bi
as Safe Oper
atin
g Area
0.1
1
10
100
1000
1
10
100
1000
V
DS
- Vol
ts
I
D
- Amper
es
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1ms
10ms
V
CE(sat)
Limi
t
DC
100µs
25µs
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK200N60C3
IXXX200N60C3
Fig. 13
. Induct
ive Sw
it
ching E
ne
rgy Los
s
vs
.
Gate R
esis
tan
ce
0.5
1.0
1.5
2.0
2.5
3.0
3.5
12
34
56
789
1
0
R
G
- Oh
m
s
E
off
- M
illiJ
o
u
le
s
1
2
3
4
5
6
7
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15
V
V
CE
= 36
0
V
I
C
= 50
A
I
C
= 100
A
Fig. 16
. Inductiv
e Turn-of
f
Sw
it
ching Tim
es
v
s.
Gate Resistance
10
30
50
70
90
110
130
150
123
4567
89
1
0
R
G
- Oh
m
s
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
t
d(of
f)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC,
V
GE
= 15
V
V
CE
= 3
60
V
I
C
= 100
A
I
C
= 50
A
Fig. 14
. Induc
tiv
e S
wi
tc
hing Ene
rgy
Loss
vs
.
Colle
c
tor Cu
rre
nt
0.0
0.5
1.0
1.5
2.0
2.5
50
55
60
65
70
75
80
85
90
95
100
I
C
- Am
p
eres
E
off
- M
illiJ
o
u
le
s
0
1
2
3
4
5
E
on
- Mi
ll
iJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 3
60
V
T
J
= 150ºC
T
J
= 25º
C
Fig. 15
. Induct
ive Sw
it
ching E
ne
rgy Los
s
vs
.
Jun
cti
o
n T
em
p
er
atu
r
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
T
J
-
D
e
gr
e
e
s
C
e
nti
gr
a
de
E
off
- M
illiJ
o
u
le
s
0
1
2
3
4
5
6
E
on
- M
illiJ
o
u
le
s
E
of
f
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 3
60
V
I
C
= 50
A
I
C
= 10
0
A
Fi
g
. 17
. I
n
du
ct
ive T
u
r
n-o
ff
Swi
tchi
n
g
T
i
m
es vs.
Colle
c
tor Cu
rre
nt
0
20
40
60
80
100
120
140
160
50
55
60
65
70
75
80
85
90
95
100
I
C
- A
m
pe
res
t
f i
- Nanoseconds
110
120
130
140
150
160
170
180
190
t
d(of
f)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15
V
V
CE
= 3
60
V
T
J
= 150ºC
T
J
= 25
º
C
Fig. 18
. Inductiv
e Turn-of
f
Sw
it
ching Tim
es
v
s.
Jun
cti
o
n T
em
per
atu
r
e
0
20
40
60
80
100
120
140
25
50
75
100
125
150
T
J
- Deg
rees Cent
ig
rade
t
f i
- Nanoseconds
110
120
130
140
150
160
170
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 3
60
V
I
C
= 100
A
I
C
= 50
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
IXYS REF: IXX_200N60C3(91)8-18-11
Fig. 2
0. Induc
ti
ve
Turn-on Sw
itc
hing T
im
es
vs
.
Collec
tor Curre
nt
20
40
60
80
100
120
50
55
60
65
70
75
80
85
90
95
100
I
C
- A
m
per
es
t
r i
- Nan
ose
con
ds
40
42
44
46
48
50
t
d(on)
- Nan
ose
con
ds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 25º
C
T
J
= 150ºC
Fig. 21
. Induct
ive
T
urn-on S
witc
hing Ti
m
es vs
.
Junc
tion T
em
perat
ure
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
T
J
- Deg
rees Ce
n
t
ig
rad
e
t
r i
- Nan
ose
con
ds
38
40
42
44
46
48
50
52
54
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 10
0
A
I
C
= 50
A
Fig. 19
. Inductiv
e Turn-on Swit
c
hing T
im
es v
s.
Gate Resistance
20
40
60
80
100
120
140
160
180
12
34
56
78
9
1
0
R
G
- Oh
m
s
t
r i
- Nanoseconds
35
45
55
65
75
85
95
105
115
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 50
A
I
C
= 100
A
P1-P3
P4-P6
IXXX200N60C3
Mfr. #:
Buy IXXX200N60C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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