MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
_______________________________________________________________________________________ 7
Typical Operating Circuit
The typical operating circuit of the MAX8702 (Figure 2)
shows the power-stage and gate-driver circuitry of a dual-
phase CPU core supply operating at 300kHz, with each
phase capable of supplying 20A of load current. Table 1
lists recommended component options, and Table 2 lists
the component suppliers contact information.
Detailed Description
The MAX8702/MAX8703 dual-phase noninverting
MOSFET drivers are intended to work with PWM con-
troller ICs in CPU core and other multiphase switching
regulators. Each MOSFET driver is capable of driving
3nF capacitive loads with only 19ns propagation delay
and 8ns typical rise and fall times. Larger capacitive
loads are allowable but result in longer propagation
and transition times. Adaptive dead-time control pre-
vents shoot-through currents and maximizes converter
NH1
MAX8702
NL1
2.2µF
0.22µF
0.22µF
1µF
10
+5V
R
TSET
D
BST1
TSET
AGND
D1
L1
V
OUT
V
OUT
V
IN
7V TO 20V
V
IN
7V TO 20V
BST1
DH1
LX1
DL1
PGND1
V
CC
DRHOT
C
OUT1
C
IN1
V
DD
NH2
SHDN
+5V
NL2
D2
L2
BST2
DH2
LX2
FROM
CONTROLLER
IC
DL2
PGND2
C
OUT2
C
IN2
D
BST2
100k
+5V
DRSKP
SKIP
PWM1
PWM1
PWM2
PWM2
Figure 2. MAX8702 Typical Operating Circuit
DESIGNATION DESCRIPTION
Total Input
Capacitance (C
IN
)
(4) 10µF, 25V
Taiyo Yuden TMK432BJ106KM or
TDK C4532X5R1E106M
Total Output
Capacitance (C
OUT
)
(4) 330µF, 2.5V, 9m low-ESR polymer
capacitor (D case)
Sanyo 2R5TPE330M9
Schottky Diode
(per phase)
3A Schottky diode
Central Semiconductor
CMSH3-40
Inductor (per phase)
0.6µH
Panasonic ETQP1H0R6BFA or
Sumida CDEP134H-0R6
High-Side MOSFET
(NH, per phase)
Siliconix (1) Si7892DP or
International Rectifier (2) IRF6604
Low-Side MOSFET
(NL, per phase)
Siliconix (2) Si7442DP or
International Rectifier (2) IRF6603
Table 1. Component List
SUPPLIER WEBSITE
Central Semiconductor www.centralsemi.com
Fairchild Semiconductor www.fairchildsemi.com
International Rectifier www.irf.com
Panasonic www.panasonic.com
Sanyo www.secc.co.jp
Siliconix (Vishay) www.vishay.com
Sumida www.sumida.com
Taiyo Yuden www.t-yuden.com
TDK www.component.tdk.com
Table 2. Component Suppliers
DH_
BST_
LX_
DL_
V
DD
PGND_
V
CC
TSET*
DRHOT*
PWM_
ZX
SKIP
AGND
SHDN
CONTROL
AND ADAPTIVE
DEAD-TIME
CIRCUIT
TEMP
SENSOR +
TSDN
LX_
PGND_
PWM BLOCK (x2)
*MAX8702 ONLY
MAX8702
MAX8703
UVLO
Figure 3. MAX8702 Functional Diagram
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
8 _______________________________________________________________________________________
efficiency while allowing operation with a variety of
MOSFETs and PWM controllers. A UVLO circuit allows
proper power-on sequencing. The PWM control inputs
are both TTL and CMOS compatible.
The MAX8702 integrates a resistor-programmable tem-
perature sensor. An open-drain output (DRHOT) signals
to the system when the die temperature of the driver
exceeds the set temperature. See the Temperature
Sensor section.
MOSFET Gate Drivers (DH, DL)
The DH and DL drivers are optimized for driving mod-
erately sized high-side and larger low-side power
MOSFETs. This is consistent with the low duty factor
seen in the notebook CPU environment, where a large
V
IN
- V
OUT
differential exists. Two adaptive dead-time
circuits monitor the DH and DL outputs and prevent the
opposite-side FET from turning on until DH or DL is fully
off. There must be a low-resistance, low-inductance
path from the DH and DL drivers to the MOSFET gates
for the adaptive dead-time circuits to work properly.
Otherwise, the sense circuitry interprets the MOSFET
gate as off while there is actually still charge left on
the gate. Use very short, wide traces measuring 10 to
20 squares (50 to 100 mils wide if the MOSFET is 1in
from the device).
The internal pulldown transistor that drives DL low is
robust, with a 0.35 (typ) on-resistance. This helps pre-
vent DL from being pulled up due to capacitive coupling
from the drain-to-gate capacitance of the low-side syn-
chronous-rectifier MOSFETs when LX switches from
ground to V
IN
. Applications with high input voltages and
long, inductive DL traces may require additional gate-to-
source capacitance to ensure fast-rising LX edges do
not pull up the low-side MOSFETs gate voltage, caus-
ing shoot-through currents. The capacitive coupling
between LX and DL created by the MOSFETs gate-to-
drain capacitance (C
RSS
), gate-to-source capacitance
(C
ISS
- C
RSS
), and additional board parasitics should
not exceed the minimum threshold voltage:
Lot-to-lot variation of the threshold voltage can cause
problems in marginal designs. Typically, adding a
4700pF capacitor between DL and power ground,
close to the low-side MOSFETs, greatly reduces cou-
pling. To prevent excessive turn-off delays, do not
exceed 22nF of total gate capacitance.
Alternatively, shoot-through currents may be caused by
a combination of fast high-side MOSFETs and slow low-
side MOSFETs. If the turn-off delay time of the low-side
MOSFETs is too long, the high-side MOSFETs can turn
on before the low-side MOSFETs have actually turned
off. Adding a resistor of less than 5 in series with BST
slows down the high-side MOSFET turn-on time, elimi-
nating the shoot-through currents without degrading
the turn-off time (R
BST
in Figure 4). Slowing down the
high-side MOSFETs also reduces the LX node rise
time, thereby reducing the EMI and high-frequency
coupling responsible for switching noise.
Boost Capacitor Selection
The MAX8702/MAX8703 use a bootstrap circuit to gen-
erate the floating supply voltages for the high-side dri-
vers (DH). The boost capacitors (C
BST
) selected must
be large enough to handle the gate-charging require-
ments of the high-side MOSFETs. Typically, 0.1µF
ceramic capacitors work well for low-power applica-
tions driving medium-sized MOSFETs. However, high-
current applications driving large, high-side MOSFETs
require boost capacitors larger than 0.1µF. For these
applications, select the boost capacitors to avoid dis-
charging the capacitor more than 200mV while charg-
ing the high-side MOSFETs gates:
where N is the number of high-side MOSFETs used for
one phase and Q
GATE
is the total gate charge speci-
fied in the MOSFETs data sheet. For example, assume
C
NxQ
mV
BST
GATE
=
200
VV
C
C
GS TH IN
RSS
ISS
()
<
MAX8702
MAX8703
V
DD
BST
DH
LX
(R
BST
)*
D
BST
C
BST
C
VDD
INPUT
(V
IN
)
N
H
L
( )* OPTIONAL—THE RESISTOR REDUCES THE SWITCHING-NODE RISE TIME.
Figure 4. High-Side Gate-Driver Boost Circuitry
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
_______________________________________________________________________________________ 9
(2) IRF7811W n-channel MOSFETs are used on the
high side. According to the manufacturers data sheet,
a single IRF7811W has a maximum gate charge of 24nC
(V
GS
= 5V). Using the above equation, the required
boost capacitance is:
Selecting the closest standard value, this example
requires a 0.22µF ceramic capacitor.
5V Bias Supply (V
CC
and V
DD
)
V
DD
provides the supply voltages for the low-side dri-
vers (DL). The decoupling capacitor at V
DD
also
charges the BST capacitors during the time period
when DL is high. Therefore, the V
DD
capacitor should
be large enough to minimize the ripple voltage during
switching transitions. C
VDD
should be chosen accord-
ing to the following equation:
C
VDD
= 10 x C
BST
In the example above, a 0.22µF capacitor is used for
C
BST
, so the V
DD
capacitor should be 2.2µF.
V
CC
provides the supply voltage for the internal logic
circuit and temperature sensor. To avoid switching
noise from coupling into the sensitive internal circuit, an
RC filter is recommended for the V
CC
pin. Place a 10
resistor from the supply voltage to the V
CC
pin and a
1µF capacitor from the V
CC
pin to AGND.
The total bias current I
BIAS
from the 5V supply can be
calculated using the following equation:
I
BIAS
= I
DD
+ I
CC
I
DD
= n
PHASE
x f
SW
x (n
NH
x Q
G(NH)
+ n
NL
x Q
G(NL)
)
where n
PHASE
is the number of phases, f
SW
is the
switching frequency, Q
G(NH)
and Q
G(NL)
are the
MOSFET data sheets total gate-charge specification
limits at V
GS
= 5V, n
NH
is the total number of high-side
MOSFETs in parallel, n
NL
is the total number of low-
side MOSFETs in parallel, and I
CC
is the V
CC
supply
current.
Undervoltage Lockout (UVLO)
When V
CC
is below the UVLO threshold (3.85V typ) and
SHDN and SKIP are low, DL is kept high and DH is
held low. This provides output overvoltage protection
as soon as the supply voltage is applied. Once V
CC
is
above the UVLO threshold and SHDN is high, DL and
DH levels depend on the PWM signal applied. If V
CC
falls below the UVLO threshold while SHDN is high,
both DL and DH are immediately forced low. This pre-
vents negative undershoots on the output when the
system power is removed without going through the
proper shutdown sequence.
Low-Power Pulse Skipping
The MAX8702/MAX8703 enter into low-power pulse-
skipping mode when SKIP is pulled low. In skip mode,
an inherent automatic switchover to pulse frequency
modulation (PFM) takes place at light loads. A zero-
crossing comparator truncates the low-side switch on-
time at the inductor currents zero-crossing. The
comparator senses the voltage across LX and PGND.
Once V
LX
- V
PGND
drops below the zero-crossing com-
parator threshold (see the Electrical Characteristics),
the comparator forces DL low. This mechanism causes
the threshold between pulse-skipping PFM and non-
skipping PWM operation to coincide with the boundary
between continuous and discontinuous inductor-cur-
rent operation. The PFM/PWM crossover occurs when
the load current of each phase is equal to 1/2 the peak-
to-peak ripple current, which is a function of the induc-
tor value. For a battery input range of 7V to 20V, this
threshold is relatively constant, with only a minor
dependence on the input voltage due to the typically
low duty cycles. The switching waveforms may appear
noisy and asynchronous when light loading activates
the pulse-skipping operation, but this is a normal oper-
ating condition that results in high light-load efficiency.
Shutdown
The MAX8702/MAX8703 feature a low-power shutdown
mode that reduces the V
CC
quiescent current drawn to
2µA (typ). Driving SHDN and SKIP low sets DH low and
DL high. Temperature sensing is disabled in shutdown.
Temperature Sensor (MAX8702 Only)
The MAX8702 includes a fully integrated resistor-pro-
grammable temperature sensor. The sensor incorpo-
rates two temperature-dependent reference signals
and one comparator. One signal exhibits a characteris-
tic that is proportional to temperature, and the other is
complementary to temperature. The temperature at
which the two signals are equal determines the thermal
trip point. When the temperature of the device exceeds
the trip point, the open-drain output DRHOT pulls low.
C
xnC
mV
F
BST
==
224
200
024. µ
SHDN SKIP
MODE OF OPERATION
LL
Low-power shutdown state;
temperature sensing disabled
L H PWM operation
H L Pulse-skipping operation
H H PWM operation
Table 3. Modes of Operation

MAX8702ETP+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Gate Drivers Dual-Phase MOSFET Driver w/Temp Sensor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet