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IS64WV12816DBLL-12BLA3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
VoH Output HIGH Voltage Vdd = Min., IoH = –1.0 mA 1.8 — V
VoL Output LOW Voltage Vdd = Min., IoL = 1.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 Vdd + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.)= Vdd + 0.3V dc; VIH (max.)= Vdd + 2.0V Ac (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter Test Conditions Min. Max. Unit
VoH Output HIGH Voltage Vdd = Min., IoH = –4.0 mA 2.4 — V
VoL Output LOW Voltage Vdd = Min., IoL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 Vdd + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.)= Vdd + 0.3V dc; VIH (max.)= Vdd + 2.0V Ac (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter Test Conditions VDD Min. Max. Unit
VoH Output HIGH Voltage IoH = -0.1mA 1.65-2.2V 1.4 — V
VoL Output LOW Voltage IoL = 0.1mA 1.65-2.2V — 0.2 V
VIH InputHIGHVoltage 1.65-2.2V 1.4 Vdd + 0.2 V
VIL
(1)
Input LOW Voltage
1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND ≤ VIn ≤ Vdd
–1 1 µA
ILo Output Leakage
GND ≤ Vout ≤ Vdd, OutputsDisabled –1 1 µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
VIH (max.)= Vdd + 0.3V dc; VIH (max.)= Vdd + 2.0V Ac (pulse width < 10 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com5
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
AC TEST LOADS
Figure 1.
R1
5 pF
Including
jig and
scope
R2
OUTPUT
VTM
Figure 2.
ZO = 50Ω
VDD/2
50Ω
OUTPUT
30 pF
Including
jig and
scope
AC TEST CONDITIONS
Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V + 5%) (1.65V-2.2V)
Input Pulse Level 0.4V to Vdd - 0.3V 0.4V to Vdd - 0.3V 0.4V to Vdd - 0.3V
InputRiseandFallTimes 1V/ns 1V/ns 1V/ns
InputandOutputTiming VDD/2 VDD+0.05 0.9V
and Reference Level (VRef) 2
OutputLoad SeeFigures1and2 SeeFigures1and2 SeeFigures1and2
R1 ( Ω ) 1909 317 13500
R2 ( Ω ) 1105 351 10800
Vtm (V) 3.0V 3.3V 1.8V
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5toVdd+0.5 V
Vdd Vdd Relates to GND –0.3 to 4.0 V
tstg StorageTemperature –65to+150 °C
Pt Power Dissipation 1.0 W
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposuretoabsolute
maximumratingconditionsforextendedperiodsmayaffectreliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
c
I/o
Input/Output Capacitance Vout = 0V 8 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:TA = 25°c, f=1MHz,Vdd = 3.3V.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

IS64WV12816DBLL-12BLA3

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ISSI
Description:
SRAM 2Mb 12ns 128Kx16 Async SRAM
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