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PBSS9110Y,115

P1-P3P4-P6P7-P9P10-P12P13-P14
PBSS9110Y_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 6 of 13
NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0 A - - −100 nA
V
CB
= −80 V; I
E
=0 A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −80 V; V
BE
=0 V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −4V; I
C
=0 A - - −100 nA
h
FE
DC current gain V
CE
= −5V; I
C
= −1 mA 150 - -
V
CE
= −5V; I
C
= −250 mA 150 - -
V
CE
= −5V; I
C
= −0.5 A
[1]
150 - 450
V
CE
= −5V; I
C
= −1A
[1]
125 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −250 mA; I
B
= −25 mA - - −120 mV
I
C
= −500 mA; I
B
= −50 mA - - −180 mV
I
C
= −1A; I
B
= −100 mA - - −320 mV
R
CEsat
equivalent
on-resistance
I
C
= −1A; I
B
= −100 mA
[1]
- 170 320 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA - - −1.1 V
V
BEon
base-emitter turn-on
voltage
I
C
= −1A; V
CE
= −5V - - −1.0 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f=100MHz
100 - - MHz
C
c
collector capacitance I
E
=I
e
=0 A; V
CB
= −10 V;
f=1MHz
--17pF
PBSS9110Y_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 7 of 13
NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low V
CEsat
(BISS) transistor
V
CE
= −10 V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
= −10 V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Base-emitter voltage as a function of collector
current; typical values
I
C
/I
B
=10
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
=50
(2) I
C
/I
B
=20
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa376
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
001aaa377
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
001aaa378
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
001aaa380
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
PBSS9110Y_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 8 of 13
NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
T
amb
=25°C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
T
amb
=25°C
(1) I
C
/I
B
=50
(2) I
C
/I
B
=20
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
Fig 11. Equivalent on-resistance as a function of
collector current; typical values
001aaa381
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−1
−10
V
BEsat
(V)
−10
−1
(1)
(2)
(3)
001aaa379
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−1
−10
V
BEsat
(V)
−10
−1
001aaa382
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
001aaa383
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS9110Y,115

Mfr. #:
Buy PBSS9110Y,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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