NCP1216AFORWGEVB

Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1 Publication Order Number:
EVBUM2133/D
NCP1216AFORWGEVB
Implementing a DC/DC
Single‐ended Forward
Converter with the
NCP1216A Evaluation
Board User's Manual
Introduction
This document describes how the NCP1216A controller
can be used to design a DC/DC single-ended forward
converter suitable for telecommunication applications. The
requirements for the converter are as follows:
Input Voltage Range from 36 V to 72 VDC
Continuous Output Power Greater than 30 W for a 12 V
Output Voltage
Small PCB Dimensions
Efficiency Greater then 85%
Input to Output Isolation Voltage of 1500 V
The NCP1216A controller is an attractive solution for this
application, due to the following features:
50% Maximum Duty Cycle Operation
Forward converters usually limit the maximum duty
cycle to 50%. Since the voltage reset is constrained to
be equal to the input voltage (1:1 reset ratio), it is not
desirable to exceed 50% DC to avoid saturating the
transformer core.
No Auxiliary Winding Operation
The DSS (Dynamic Self-supply) function allows
the NCP1216A derive power directly from the HV
line without having to supply V
CC
either from the
secondary output inductance (creepage distance and
isolation issues) or via an auxiliary winding delivering
a variable voltage of N V
in
.
500 mA Peak Current Capability
The NCP1216A can drive a MOSFET directly without
any additional driver stage. If the selected MOSFET
gate charge would overload the DSS capability, then an
auxiliary winding could be used solely to supply the
driver pulses.
Current-mode Operation
Cycle-by-cycle primary current monitoring eliminates
any overcurrent situations, e.g. resulting from a
secondary short-circuit.
Direct Optocoupler Connection
In applications where the input to output isolation is
required, a direct connection eases the design stage,
saving external components.
Extremely Low No-load Power Consumption
Extremely low consumption in no-load operation is a
great advantage of the NCP1216A controller. Today’s
maximum stand-by consumption standards can be
easily met if this function is used.
Short-circuit Protection
By monitoring the activity on the feedback line,
the NCP1216A simplifies the task of secondary side
short-circuit protection. Coupling problems are
eliminated thanks to this feature and the DSS
implementation.
The 35 W DC/DC Converter Board Specifications
The schematic of the proposed converter is shown in
Figure 1. This converter has the following specifications:
Minimum Input Voltage 36 VDC
Maximum Input Voltage 72 VDC
Output Voltage 12 VDC
Continued Output Current 3.0 A
Operating Frequency 100 kHz
No-load Consumption at 48 V 1.8 mA
Maximum Ambient Temperature 70C
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EVAL BOARD USER’S MANUAL
NCP1216AFORWGEVB
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2
36
72 V
+
C1
22 m/
100 V
10 mH
L1
GND DRV
CS VCC
FB
ADJ HV
IC1
NCP1216A
R1
12 k
C4
22 m
R2
1k8
R3
10 R
1N4148
D1
T2
R4
0R
Q1
FQD18N20
D3
MURA240T3
C5
1.5 n
R5
8k2
+
C3
22 m/
100 V
+
C2
22 m/
100 V
MURA240T3
D2
T1
D4A
D4B
MURB1620CT
100 mH
L2
100 R
R6
2n2
C7
+
C9
220 m/
25 V
+
C8
220 m/
25 V
+
C10
220 m/
25 V
1.0 mH
L3
C11
220 m/
25 V
+12 V
IC2
PC817
R7
560 R
18 k
R8
C12
33 n
R9
39 k
IC3
TLV431
R10
4k3
4n7/Y2
C6
Figure 1. Schematic Diagram
NCP1216AFORWGEVB
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3
Description of Converter Connection
Capacitors C1, C2, C3 and inductor L1 form the input
filter. Diode D3, capacitor C5 and resistor R5 provide the
primary clamping network which combats leakage
inductance between the reset winding and the primary
winding. The link between both windings occurs via D2
when the switch is off. Transformer T2 with diode D1 and
resistors R2, R3 serve as the primary current sensing circuit.
Thanks to low insertion losses, the final efficiency of the
converter benefits greatly from this configuration. IC1 is the
main driving circuit of the power converter. The secondary
circuitry has D4A as the forward diode and D4B as the
freewheeling diode. Capacitor C6 offers a path for
common-mode (CM) currents circulating via the various
transformer stray capacitances during switching events.
Resistors R7, R8, R9, and R10 together with capacitor C12,
shunt regulator IC3, and optocoupler IC2 form an isolated
feedback circuit for output voltage regulation. A snubber
network (R6, C7) is connected across inductor L2 in order
to damp high frequency oscillations. L2, C8, C9 and C10
form the basic LC output filter. L3 and C11 form an
additional output filter to reduce high frequency noise.
Design considerations for various sections of the
converter are described below.
Transformer Design
In a forward converter, the core magnetization is ensured
by applying a voltage V
in
on the primary side. This action
creates the core flux f which links both primary and
secondary windings. Using Faraday’s law, we can write that
E = N.df/dt, where E is the voltage generated by a winding
of N turns, energized by a flux f. By integrating this formula,
and rearranging it in terms of the input voltage V
in
and the
on time ton, we can see that the internal flux depends on the
volt-second product:
V
in
@ t
on
+ N @ f + N @ A
e
@ B
(eq. 1)
where:
A
e
is the total core area
B is the core flux density
Thus, the maximum core flux density DB
MAX
and the peak
primary magnetization current I
PKMAG
of the transformer
are given by the primary inductance value L1 and the
maximum input voltage according to equations (2) and (3):
I
PKMAG
+
V
in max
L
1
@
1
f
op
@ d
max
(eq. 2)
DB
MAX
+
V
in max
@ d
max
N
p
@ f
op
@ A
e
(eq. 3)
where:
V
in
max
is the maximum input voltage
L
1
is the primary winding inductance
f
op
is the operating frequency
ą
d
max
is the maximum duty cycle
N
p
is the count of the primary turns
The primary magnetization current does not directly
participate in the energy transfer and cause additive losses
on the power switch and the primary winding. When the
switch is off, the transformer core must be reset in order to
let the internal flux return to zero. This is done via a
dedicated reset circuit. Consequently the magnetizing
current Imag must be kept smaller than the productive
component of the primary current.
The core flux density excursion DB has to be chosen with
respect to the characteristics of the core material: the
saturation flux density Bmax or Bsat, the residual flux
density Br, hysteretic losses and the core temperature
behavior. With respect to these characteristics, the flux
density excursion in high frequency converters should be
between 0.15 T and 0.2 T. If a higher value is chosen, greater
losses will be generated. The primary turn count N
p
can be
calculated by rearranging equation 4:
N
p
+
V
in max
@ d
max
DB
MAX
@ f
op
@ A
e
(eq. 4)
For an EFD25 core with a total core area of 58 mm
2
(DB
max
= 0.2 T, V
in
max
= 80 V, f
op
= 100 kHz and
maximum duty cycle d
max
= 0.5) then the number of
primary turns N
p
= 35.
The number of reset winding turns depends on design
tradeoffs. When the number of turns of the reset winding is
lower than the that of the primary winding, the reflected
voltage on the power switch drain will be lower than
2 V
in max
. However, this limits the maximum duty cycle
excursion to less than 50%. Conversely, if the reset turns are
larger than the primary turns, the maximum allowed duty
cycle will increase but the MOSFET voltage stress will
exceed 2 V
in
max
. Due to these issues, the practical number
of turns for the reset winding is usually chosen to be the same
as the primary winding, or a 1:1 ratio. It is important to
provide a very good coupling between these two windings.
A high leakage inductance between these windings would
require a hard voltage clamp that would hurt the converter
efficiency.
The number of turns on the secondary winding N
s
can be
obtained from equation 5:
N
s
+ N
p
@
V
out
d
max
) V
f
V
in min
(eq. 5)
where:
V
out
is the desired output voltage
V
f
is the voltage drop of the output rectifier
V
in
min
is the minimum input voltage
In the example using the EFD 25, equation (5) gives
N
s
= 25 turns.
The primary and the secondary windings must be wound
to limit the skin effect. This can be done by using several
wires wound in parallel. The maximum diameter D
max
(in mm) of each single wire in the winding is given by
equation 6:

NCP1216AFORWGEVB

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Management IC Development Tools NCP1216A 35 W FORWARD EVB
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