NCP1216AFORWGEVB

NCP1216AFORWGEVB
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PCB Layout Design
A double-sided PCB is used to minimize the size of the
converter. The board is designed with respect to the power
dissipation created by the power devices, thus large cooling
areas are used. Sound grounding techniques and appropriate
isolation distances were incorporated into the layout. The
PCB layout and component arrangement can be seen on
Figures 3, 4, 5 and 6.
Table 1. BILL OF MATERIALS
L1
10 mH DS3316P103Coilcraft
L2
100 mH B0754ACoilcraft
L3
1.0 mH DS3316P102Coilcraft
T1 C0972ACoilcraft
T2
Toroid f6.0 mm, Material T30Epcos
N
s
= 38 Turns
C1, C2,
C3
22 m/100 V Nippon ChemiConKMF
C4
22 m/25 V Nippon ChemiConKMF
C5 1,5 nF/500 V Through Hole Ceramic Capacitor
C6 4n7 Y2 Type Capacitor
C7 2,2 nF/500 V Through Hole Ceramic Capacitor
C8, C9,
C10, C11
220 m/25 V Nippon ChemiConLXZ
C12 33 nF SMD 1206
R1
12 kW SMD 0805
R2
1,8 kW SMD 0805
R3
10 W SMD 0805
R4 0R SMD1206
R5
8,2 kW/1.0 W Through Hole
R6
100 W/1.0 W Through Hole
R7
560 W SMD1206
R8
18 kW SMD 0805
R9
39 kW SMD 0805
R10
4,3 kW SMD 0805
D1 MMSD914T1ON Semiconductor
D2, D3 MURA2403T3ON Semiconductor
D4 MURB1620CTON Semiconductor
Q1 FQD18N20V2TFFairchild
IC1 NCP1216AON Semiconductor
IC2 PC817SHARP
IC3 TLV431BSN1T1ON Semiconductor
Performance of the Converter
The power conversion efficiency of the DC/DC converter
is shown in Figures 7 and 8.
86
85, 5
85
84, 5
84
36 46 56 66 76 86
EFFICIENCY (%)
INPUT VOLTAGE (V)
Figure 7. DC/DC Converter Efficiency
vs. Input Voltage
90
85
80
75
70
65
60
3
5
302520151050
EFFICIENCY (%)
OUTPUT POWER (W)
Figure 8. DC/DC Converter Efficiency
vs. Output Power (V
in
= 48 V)
The no-load consumption as a function of input voltage is
shown in Figure 9.
Figure 9. No Load Consumption vs. Input Voltage
150
140
130
120
110
100
90
80
70
36 40 44 48 52 56 60 64 68 72 76 80
INPUT VOLTAGE (V)
NO LOAD CONSUMPTION (mW)
NCP1216AFORWGEVB
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The gate (trace 1) and drain (trace 2) waveforms of the
power MOSFET Q1 are shown in Figures 10, 11, 12 and 13
for several converter conditions.
GATE
DRAIN
Figure 10. V
input
= 48 V, I
out
= 3.0 A
GATE
DRAIN
Figure 11. No Load Operation
GATE
DRAIN
Figure 12. Overload Operation
GATE
DRAIN
Figure 13. Detailed Burst During Overload
The load regulation for an output current step from 10%
to 100% can be seen in Figure 14.
Figure 14. Load Regulation (I
out
changing
from 10% to 100%0.3 A to 3.0 A)
NCP1216AFORWGEVB
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NCP1216AFORWGEVB

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Management IC Development Tools NCP1216A 35 W FORWARD EVB
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