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MGA-633P8-BLKG

P1-P3P4-P6P7-P9P10-P12P13-P14
MGA-633P8
Ultra Low Noise, High Linearity Active Bias Low Noise Amplier
Data Sheet
Description
Avago Technologies’ MGA-633P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplier (LNA). The LNA has
low noise and high linearity achieved through the use of
Avago Technologies’ proprietary 0.25um GaAs Enhance-
ment-mode pHEMT process. It is housed in a miniature
2.0 x 2.0 x 0.75mm
3
8-pin Quad-Flat-Non-Lead (QFN)
package. It is designed for optimum use from 450MHz up
to 2GHz. The compact footprint and low prole coupled
with low noise, high gain and high linearity make the
MGA-633P8 an ideal choice as a low noise amplier for
cellular infrastructure for GSM and CDMA. For optimum
performance at higher frequency from 1.5GHz to 2.3GHz,
the MGA-634P8 is recommended, and from 2.3GHz to
4GHz, the MGA-635P8 is recommended. Both MGA-634P8
and MGA-635P8 share the same package and pinout as
MGA-633P8
Pin Conguration and Package Marking
2.0 x 2.0 x 0.75 mm
3
8-lead QFN
Note:
Package marking provides orientation and identication
“33” = Device Code
“X” = Month Code
Features
• Ultra Low noise Figure
• High linearity performance
• GaAs E-pHEMT Technology
[1]
• Low cost small package size: 2.0 x 2.0 x 0.75 mm
3
• Excellent uniformity in product specications
• Tape-and-Reel packaging option available
Specications
900MHz; 5V, 54mA
• 18 dB Gain
• 0.37 dB Noise Figure
• 15dB Input Return Loss
• 37 dBm Output IP3
• 22 dBm Output Power at 1dB gain compression
Applications
• Low noise amplier for cellular infrastructure for GSM
and CDMA.
• Other ultra low noise application.
Simplied Schematic
[2]
[1]
[3]
[4]
[7]
[8]
[6]
[5]
Top View Bottom View
[7]
[8]
[6]
[5]
[2]
[1]
[3]
[4]
33X
Pin1 – Vbias Pin5 – Not Used
Pin2 – RFinput Pin6 – Not Used
Pin3 – Not Used Pin7 – RFoutput / Vdd
Pin4 – Not Used Pin8 – Not Used
Centre tab - Ground
Notes:
• The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
• Detail of the components needed for this product is shown in Table 1.
• Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
• Good RF practice requires all unused pins to be earthed.
L1 L2
C3
C1 C2
C4
R2
RFin RFout
Vdd
[2]
[1]
[3]
[4]
[7]
[8]
[6]
[5]
C6
Rbias
R1
bias
C5
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V (Class A)
ESD Human Body Model = 600 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
2
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol Parameter Units Absolute Max.
V
dd
Device Voltage, RF output to ground V 5.5
I
dd
Drain Current mA 90
P
max
CW RF Input Power
(V
dd
= 5.0 V, I
dd
= 54 mA)
dBm +20
P
diss
Total Power Dissipation
[3]
W 0.495
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Thermal Resistance
Thermal Resistance
[2]
(V
dd
= 5.0 V, I
dd
= 54 mA), θ
jc
= 72°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Power dissipation with unit turned on.
Board temperature T
B
is 25°C. Derate at
13.89mW/°C for T
B
>114°C.
Electrical Specications
[1, 4]
RF performance at T
A
= 25°C, V
dd
=5V, R
bias
=6.8kOhm, 900MHz, measured on demo board in Figure 5 with component
list in Table1 for 900 MHz matching.
Symbol Parameter and Test Condition Units Min. Typ. Max.
I
dd
Drain Current mA 39 54 67
Gain Gain dB 16.5 18 19.5
OIP3
[2]
Output Third Order Intercept Point dBm 34 37
NF
[3]
Noise Figure dB 0.37 0.6
OP1dB Output Power at 1dB Gain Compression dBm 22
IRL
Input Return Loss, 50Ω source
dB 15
ORL
Output Return Loss, 50Ω load
dB 21
REV ISOL Reverse Isolation dB 21
Notes:
1. Measurements at 900 MHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
RF1
= 900 MHz, F
RF2
= 901 MHz with input power of -15dBm per tone.
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3
Product Consistency Distribution Charts
[1, 2]
Figure 1. Id @ 900MHz, 5V, 54mA
Mean = 54
Figure 3. OIP3 @ 900MHz, 5V, 54mA
Mean = 37
Notes:
1. Distribution data samples are 500 samples taken from 3 dierent wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Circuit Losses have not been de-embedded from the actual measurements.
Figure 2. Noise Figure @ 900MHz, 5V, 54mA
Mean = 0.37
Figure 4. Gain @ 900MHz, 5V, 54mA
Mean = 18
38 40 42 44 46 48 50 52 54 56 58 60 62 64 66
USLLSL USL
0.3 0.4 0.5 0.6
34 35 3736 38 39
LSL
16.5 17 17.5 17.518 19 19.5
USLLSL
Id
Max:67
Min:39
Mean:54
Noise Figure
Max:0.6
Mean:0.37
OIP3
Min:34
Mean:37
Gain
Max:19.5
Min:16.5
Mean:18
P1-P3P4-P6P7-P9P10-P12P13-P14

MGA-633P8-BLKG

Mfr. #:
Buy MGA-633P8-BLKG
Manufacturer:
Broadcom / Avago
Description:
IC RF AMP CDMA 450MHZ-2GHZ 8QFN
Lifecycle:
New from this manufacturer.
Delivery:
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