Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
5
Vishay Siliconix
Si4622DY
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.1
1
10
100
0.00.20.40.60.8 1.0 1.2
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0 25 50 75 100 125 150
T
J
- Temperature (°C)
- Reverse (A)I
R
10
-3
10
-5
10
-6
10
-4
10
-2
10
-1
10 V
30 V
20 V
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.010
0.014
0.018
0.022
0.026
0.030
048 12 16 20
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
=125 °C
I
D
=9.6A
0
10
20
30
40
0.01 0.1 1 10
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
100 ms
1 s
DC
Limited byR
DS(on)
*
BVDSS
Limited
10 ms
10 s
1 ms
100 µs
