Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
9
Vishay Siliconix
Si4622DY
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.00.20.40.60.8 1.0 1.2
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
048 12 16
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
= 8.6 A
0
2
4
6
8
10
00011001.01
Time (s)
Power (W)
10
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
100 ms
1s
DC
Limited byR
DS(on)
*
BVDSS
Limited
10 ms
10 s
1ms
100 µs
