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AUIRF7484Q

P1-P3P4-P6P7-P9P10-P11
AUIRF7484Q
V
DSS
40V
R
DS(on)
max.
10m
I
D
14A
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low On-Resistance
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current 14
A
I
D
@ T
A
= 70°C Continuous Drain Current 11
I
DM
Pulsed Drain Current 110
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 8.0 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
I
AR
Avalanche Current See Fig.19,20, 16b, 16c A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JL
Junction-to-Drain Lead ––– 20
R
JA
Junction-to-Ambient ––– 50
SO-8
AUIRF7484Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7484Q SO-8 Tape and Reel 4000 AUIRF7484QTR
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
AUIRF7484Q
2 2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting T
J
= 25°C, L = 2.3mH, R
G
= 25, I
AS
= 14A. (See Fig. 12)
Limited by T
Jmax
, see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.040 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 10
m
V
GS
= 7.0V, I
D
= 14A 
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 40 ––– ––– S V
DS
= 10V, I
D
= 14A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=40V, V
GS
= 0V
––– ––– 250 V
DS
= 32V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 8.0V
Gate-to-Source Reverse Leakage ––– ––– -200 V
GS
= -8.0V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 69 100
nC
I
D
= 14A
Q
gs
Gate-to-Source Charge ––– 9.0 ––– V
DS
= 32V
Q
gd
Gate-to-Drain Charge ––– 16 –––
V
GS
= 7.0V
t
d(on)
Turn-On Delay Time ––– 9.3 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 5.0 –––
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 180 –––
R
G
= 6.2
t
f
Fall Time ––– 58 –––
V
GS
= 7.0V
C
iss
Input Capacitance ––– 3520 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 660 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 76 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 2.3
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 110
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 2.3A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 59 89 ns
T
J
= 25°C ,I
F
= 2.3A,
Q
rr
Reverse Recovery Charge ––– 110 170 nC
di/dt = 100A/µs 
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRF7484Q
3 2015-11-16
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
100000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.8V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 7.5V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.8V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 7.5V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
1.0 2.0 3.0 4.0
V
GS
, Gate-to-Source Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
P1-P3P4-P6P7-P9P10-P11

AUIRF7484Q

Mfr. #:
Buy AUIRF7484Q
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET N 40V, 14A, 10mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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