AUIRF7484Q
7 2015-11-16
Fig 16a. Maximum Avalanche Energy
vs. Drain Current
Fig 17. Gate Charge Test Circuit
Fig 18. Basic Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 16b. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 16c. Unclamped Inductive Waveforms
25 50 75 100 125 150
0
104
208
312
416
520
Starting Tj, Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
AS
°
I
D
TOP
BOTTOM
6.3A
11A
14A
AUIRF7484Q
8 2015-11-16
Fig 19. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 19, 20:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16b, 16c.
4. P
D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av = Allowable avalanche current.
7. T
= Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 11, 16).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = t
av ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 20. Maximum Avalanche Energy
vs. Temperature
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
tav (sec)
0.01
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
25
50
75
100
125
150
175
200
225
250
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 10% Duty Cycle
I
D
= 14A
AUIRF7484Q
9 2015-11-16
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010] C
AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIM ETER
3. DIMENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRU SIO N S.
6 DIM EN SIO N D O ES N O T IN CLUD E M O LD PRO TRU SIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

AUIRF7484Q

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET N 40V, 14A, 10mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet