Nexperia
PMPB29XPEA
20 V, P-channel Trench MOSFET
V
GS
(V)
0 -2.0-1.5-0.5 -1.0
017aaa934
-4
-8
-12
I
D
(A)
0
T
j
= 150 °C T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
017aaa935
1.0
1.2
0.8
1.4
1.6
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-028290
-0.8
-0.4
-1.2
-1.6
V
GS(th)
(V)
0
min
typ
max
I
D
= -250 µA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
017aaa937
V
DS
(V)
-10
-1
-10
2
-10-1
10
3
10
4
C
(pF)
10
2
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB29XPEA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 27 March 2018 8 / 14
