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74AUP2G38GN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
74AUP2G38 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 11 February 2013 6 of 21
NXP Semiconductors
74AUP2G38
Low-power dual 2-input NAND gate; open drain
T
amb
= 40 C to +85 C
V
IH
HIGH-level input voltage V
CC
= 0.8 V 0.70V
CC
-- V
V
CC
= 0.9 V to 1.95 V 0.65V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.6 - - V
V
CC
= 3.0 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 0.8 V - - 0.30V
CC
V
V
CC
= 0.9 V to 1.95 V - - 0.35V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 3.0 V to 3.6 V - - 0.9 V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V - - 0.1 V
I
O
= 1.1 mA; V
CC
= 1.1 V - - 0.3V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V - - 0.37 V
I
O
= 1.9 mA; V
CC
= 1.65 V - - 0.35 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.33 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.45 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.33 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.45 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.5 A
I
OZ
OFF-state output current V
I
= V
IH
or V
IL
; V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 3.6 V
--0.5 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.5 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
--0.6 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--0.9A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
--50A
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74AUP2G38 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 11 February 2013 7 of 21
NXP Semiconductors
74AUP2G38
Low-power dual 2-input NAND gate; open drain
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 0.8 V 0.75V
CC
-- V
V
CC
= 0.9 V to 1.95 V 0.70V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.6 - - V
V
CC
= 3.0 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 0.8 V - - 0.25V
CC
V
V
CC
= 0.9 V to 1.95 V - - 0.30V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 3.0 V to 3.6 V - - 0.9 V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V - - 0.11 V
I
O
= 1.1 mA; V
CC
= 1.1 V - - 0.33V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V - - 0.41 V
I
O
= 1.9 mA; V
CC
= 1.65 V - - 0.39 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.36 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.50 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.36 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.50 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.75 A
I
OZ
OFF-state output current V
I
= V
IH
or V
IL
; V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 3.6 V
--0.75 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.75 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
= 0 V to 0.2 V
--0.75 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--1.4A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
--75A
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74AUP2G38 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 11 February 2013 8 of 21
NXP Semiconductors
74AUP2G38
Low-power dual 2-input NAND gate; open drain
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Max
(125 C)
C
L
= 5 pF
t
pd
propagation delay nA, nB to nY; see Figure 8
[2]
V
CC
= 0.8 V - 13.5 - - - - ns
V
CC
= 1.1 V to 1.3 V 1.9 4.6 10.4 1.8 11.4 12.6 ns
V
CC
= 1.4 V to 1.6 V 1.5 3.3 6.5 1.4 7.4 8.2 ns
V
CC
= 1.65 V to 1.95 V 1.2 2.9 5.1 1.1 5.9 6.5 ns
V
CC
= 2.3 V to 2.7 V 1.0 2.2 3.8 0.9 4.5 4.9 ns
V
CC
= 3.0 V to 3.6 V 0.9 2.3 4.0 0.8 4.5 4.9 ns
C
L
= 10 pF
t
pd
propagation delay nA, nB to nY; see Figure 8
[2]
V
CC
= 0.8 V - 16.3 - - - - ns
V
CC
= 1.1 V to 1.3 V 2.3 5.6 12.3 2.1 13.7 15.1 ns
V
CC
= 1.4 V to 1.6 V 1.8 4.1 7.6 1.7 8.8 9.7 ns
V
CC
= 1.65 V to 1.95 V 1.6 3.8 6.1 1.4 7.1 7.8 ns
V
CC
= 2.3 V to 2.7 V 1.4 2.9 4.6 1.2 5.4 5.9 ns
V
CC
= 3.0 V to 3.6 V 1.3 3.2 5.7 1.1 6.4 7.0 ns
C
L
= 15 pF
t
pd
propagation delay nA, nB to nY; see Figure 8
[2]
V
CC
= 0.8 V - 19.0 - - - - ns
V
CC
= 1.1 V to 1.3 V 2.6 6.6 14.2 2.4 15.8 17.4 ns
V
CC
= 1.4 V to 1.6 V 2.1 4.8 8.7 1.9 10.1 11.1 ns
V
CC
= 1.65 V to 1.95 V 1.9 4.6 7.6 1.7 8.5 9.3 ns
V
CC
= 2.3 V to 2.7 V 1.6 3.6 5.6 1.5 6.3 6.9 ns
V
CC
= 3.0 V to 3.6 V 1.6 4.1 7.5 1.4 8.3 9.1 ns
C
L
= 30 pF
t
pd
propagation delay nA, nB to nY; see Figure 8
[2]
V
CC
= 0.8 V - 27.0 - - - - ns
V
CC
= 1.1 V to 1.3 V 3.6 9.5 19.5 3.2 21.8 24.0 ns
V
CC
= 1.4 V to 1.6 V 2.9 7.0 11.5 2.6 13.6 15.0 ns
V
CC
= 1.65 V to 1.95 V 2.6 7.0 12.1 2.3 13.3 14.6 ns
V
CC
= 2.3 V to 2.7 V 2.4 5.4 8.9 2.1 9.9 10.9 ns
V
CC
= 3.0 V to 3.6 V 2.3 6.5 12.7 2.1 13.9 15.3 ns
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74AUP2G38GN,115

Mfr. #:
Buy 74AUP2G38GN,115
Manufacturer:
Nexperia
Description:
Logic Gates Low-Power dual 2-input NAND gate
Lifecycle:
New from this manufacturer.
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