SI2308DS-T1-E3 Datasheet SI2308DS-T1-E3 | P1-P3

Vishay Siliconix

Si2308DS

Document Number: 70797

S09-0133-Rev. D, 02-Feb-09

www.vishay.com

1

N-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

60

0.16 at V

GS

= 10 V

2.0

0.22 at V

GS

= 4.5 V

1.7

Ordering Information: Si2308DS-T1

Si2308DS-T1-E3 (Lead (Pb)-free)

Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

* Marking Code

Si2308DS (A8)*

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Notes:

a. Surface Mounted on FR4 board, t ≤ 5 s.

b. Pulse width limited by maximum junction temperature.

c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

2.0

A

T

A

= 70 °C

1.6

Pulsed Drain Current

b

I

DM

10

Continuous Source Current (Diode Conduction)

a

I

S

1.0

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

1.25

W

T

A

= 70 °C

0.80

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Unit

Maximum Junction-to-Ambient

a

R

thJA

100

°C/W

Maximum Junction-to-Ambient

c

166

www.vishay.com

2

Document Number: 70797

S09-0133-Rev. D, 02-Feb-09

Vishay Siliconix

Si2308DS

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

DS

= 0 V, I

D

= 250 µA

60

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.5 3.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 60 V, V

GS

= 0 V

0.5

µA

V

DS

= 60 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 4.5 V, V

GS

= 10 V

6

A

V

DS

≥ 4.5 V, V

GS

= 4.5 V

4

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 2.0 A

0.125 0.16

Ω

V

GS

= 4.5 V, I

D

= 1.7 A

0.155 0.22

Forward Transconductance

a

g

fs

V

DS

= 4.5 V, I

D

= 2.0 A

4.6 S

Diode Forward Voltage

a

V

SD

I

S

= 1 A, V

GS

= 0 V

0.77 1.2 V

Dynamic

Total Gate Charge

Q

g

V

DS

= 30 V, V

GS

= 10 V, I

D

= 2.0 A

4.8 10

nCGate-Source Charge

Q

gs

0.8

Gate-Drain Charge

Q

gd

1.0

Gate Resistance

R

g

0.5 3.3 Ω

Input Capacitance

C

iss

V

DS

= 25 V, V

GS

= 0 V, f = 1 MHz

240

pFOutput Capacitance

C

oss

50

Reverse Transfer Capacitance

C

rss

15

Switching

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 30 V, R

L

= 30 Ω

I

D

≅ 1 A, V

GEN

= 4.5 V, R

g

= 6 Ω

715

ns

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

17 35

Fall Time

t

f

615

Document Number: 70797

S09-0133-Rev. D, 02-Feb-09

www.vishay.com

3

Vishay Siliconix

Si2308DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

3

6

9

12

0246810

V

GS

= 10 thru 5 V

4 V

3 V

1 V, 2 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0.0

0.2

0.4

0.6

0.8

1.0

036912

V

GS

= 4.5 V

V

GS

= 10 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

0

2

4

6

8

10

012345

V

DS

= 30 V

I

D

= 2.0 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

3

6

9

12

012345

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

25 °C

0

100

200

300

400

0 6 12 18 24 30

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 2.0 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

SI2308DS-T1-E3

SI2308DS-T1-E3

Products related to this Datasheet