SI2308DS-T1-E3

SI2308DS-T1-E3
Mfr. #:
SI2308DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SI2308DS-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308DS-T1-E3 DatasheetSI2308DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.45 mm
Length:
2.9 mm
Series:
SI2
Width:
1.6 mm
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI2308DS-E3
Unit Weight:
0.000282 oz
Tags
SI2308DS-T1-E, SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET;N-Ch;VDSS 60V;RDS(ON) 0.125Ohm;ID 2A;TO-236 (SOT-23);PD 1.25W;VGS +/-20V
***ure Electronics
SI2308DS Series 60 V 0.15 Ohm 10 nC N-Channel Surface Mount Mosfet - SOT-23
***nell
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:2A; Resistance, Rds On:0.16ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:A8; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Min:1.5V; Width, External:3.05mm; Width, Tape:8mm
Part # Mfg. Description Stock Price
SI2308DS-T1-E3
DISTI # SI2308DS-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2308DS-T1-E3
    DISTI # SI2308DS-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI2308DS-T1-E3
      DISTI # SI2308DS-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI2308DS-T1-E3
        DISTI # 781-SI2308DS-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
        RoHS: Compliant
        0
          SI2308DS-T1
          DISTI # 781-SI2308DS
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
          RoHS: Not compliant
          0
            SI2308DS-T1-E3
            DISTI # 1470158
            Vishay Intertechnologies 
            RoHS: Compliant
            0
            • 10:$0.9600
            SI2308DST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            RoHS: Compliant
            3865
              Image Part # Description
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3

              MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS

              Mfr.#: SI2308DS

              OMO.#: OMO-SI2308DS-1190

              New and Original
              SI2308DS-T1

              Mfr.#: SI2308DS-T1

              OMO.#: OMO-SI2308DS-T1-1190

              MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3-VISHAY

              MOSFET N-CH 60V 2A SOT23-3
              SI2308DS-T1-E3/B02

              Mfr.#: SI2308DS-T1-E3/B02

              OMO.#: OMO-SI2308DS-T1-E3-B02-1190

              New and Original
              SI2308DS-T1-ES , MAX6425

              Mfr.#: SI2308DS-T1-ES , MAX6425

              OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

              New and Original
              SI2308DS-T1-GE3

              Mfr.#: SI2308DS-T1-GE3

              OMO.#: OMO-SI2308DS-T1-GE3-1190

              N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
              Availability
              Stock:
              Available
              On Order:
              1000
              Enter Quantity:
              Current price of SI2308DS-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
              Start with
              Newest Products
              • -12 V and -20 V P-Channel Gen III MOSFETs
                Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
              • Compare SI2308DS-T1-E3
                SI2308DST1E3 vs SI2308DST1E3B02 vs SI2308DST1ESMAX6425
              • DG2788A Dual DPDT / Quad SPDT Analog Switch
                Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
              • Smart Load Switches
                Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
              • SUM70101EL 100 V P-Channel MOSFET
                Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
              • DGQ2788A AEC-Q100 Qualified Analog Switch
                The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
              Top