PartNumber | SI2308CDS-T1-GE3 | SI2308BDS-T1-GE3 | SI2308BDS-T1-E3 |
Description | MOSFET 60V Vds 20V Vgs SOT-23 | MOSFET 60V Vds 20V Vgs SOT-23 | MOSFET 60V Vds 20V Vgs SOT-23 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 2.6 A | 2.3 A | 2.3 A |
Rds On Drain Source Resistance | 200 mOhms | 156 mOhms | 156 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 1 V | 1 V |
Vgs Gate Source Voltage | 20 V | 10 V | 10 V |
Qg Gate Charge | 2 nC | 6.8 nC | 6.8 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.6 W | 1.66 W | 1.66 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Series | Si2308CDS | SI2 | SI2 |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 3.2 S | 5 S | 5 S |
Fall Time | 16 ns | 7 ns | 7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 10 ns | 10 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
Typical Turn On Delay Time | 23 ns | 4 ns | 4 ns |
Tradename | - | TrenchFET | TrenchFET |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Part # Aliases | - | SI2308BDS-GE3 | SI2308BDS-E3 |
Unit Weight | - | 0.000282 oz | 0.000282 oz |