IRFH3707TRPBF Datasheet IRFH3707TRPBF, IRFH3707TR2PBF | P1-P3

www.irf.com 1

09/17/10

IRFH3707PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 10

Applications

Benefits

3mm x 3mm PQFN

l Low R

DS(ON)

l Very Low Gate Charge

l Low Junction to PCB Thermal Resistance

l Fully Characterized Avalanche Voltage and

Current

l 100% Tested for R

G

l Lead-Free (Qualified up to 260°C Reflow)

l RoHS compliant (Halogen Free)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

D

S

G

S

V

DSS

R

DS(on)

max

Qg

30V

12.4m

@V

GS

= 10V

5.4nC

l Synchronous Buck Converter for Computer

Processor Power

l Isolated DC to DC Converters for Network and

Telecom

l Buck Converters for Set-Top Boxes

l System/load switch

Absolute Maximum Ratin

g

s

Parameter Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V (Package Limited)

I

DM

Pulsed Drain Current

P

D

@

T

A

= 25°C

Power Dissipation

P

D

@T

A

= 70°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 7.5

R

θJA

Junction-to-Ambient

––– 45

°C/W

R

θJA

Junction-to-Ambient (t<10s)

––– 31

-55 to + 150

2.8

0.02

1.8

Max.

12

29

96

± 20

30

9.4

18

V

W

A

°C

PD - 96227B

IRFH3707PbF

2 www.irf.com

S

D

G

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. T

y

p. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 9.4 12.4

––– 14.5 17.9

V

GS(th)

Gate Threshold Voltage 1.35 1.8 2.35 V

∆

V

GS(th)

Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 17 ––– ––– S

Q

g

Total Gate Charge ––– 5.4 8.1

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 1.1 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 0.7 –––

Q

gd

Gate-to-Drain Charge ––– 2.2 –––

Q

godr

Gate Charge Overdrive ––– 1.5 ––– See Fig.17 & 18

Q

sw

Switch Char

g

e (Q

gs2

+ Q

gd

)

––– 2.9 –––

Q

oss

Output Charge ––– 3.8 ––– nC

R

G

Gate Resistance ––– 2.0

–––

Ω

t

d(on)

Turn-On Delay Time ––– 9.0 –––

t

r

Rise Time –––11–––

t

d(off)

Turn-Off Delay Time ––– 9.9 –––

t

f

Fall Time ––– 5.6 –––

C

iss

Input Capacitance ––– 755 –––

C

oss

Output Capacitance ––– 171 –––

C

rss

Reverse Transfer Capacitance ––– 83 –––

Avalanche Characteristics

Parameter Units

E

AS

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy

mJ

I

AR

A

va

l

anc

h

e

C

urrent

A

Diode Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 20 30 ns

Q

rr

Reverse Recovery Charge ––– 27 41 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 4.5V, I

D

= 9.4A

V

GS

= 4.5V

Typ.

–––

R

G

=1.3

Ω

V

DS

= 15V, I

D

= 9.4A

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

m

Ω

µA

I

D

= 9.4A

T

J

= 25°C, I

F

= 9.4A, V

DD

= 15V

di/dt = 200A/

µ

s

T

J

= 25°C, I

S

= 9.4A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

GS

= 20V

V

GS

= -20V

V

DS

= 24V, V

GS

= 0V

MOSFET symbol

V

DS

= 16V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 9.4A

V

GS

= 0V

V

DS

= 15V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 12A

pF

nC

Conditions

See Fig.15

Max.

13

9.4

ƒ = 1.0MHz

V

DS

= 15V

–––

V

DS

= V

GS

, I

D

= 25µA

A

3.5

––– ––– 96

––– –––

nA

ns

IRFH3707PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

5.0V

4.5V

3.5V

3.3V

3.0V

2.9V

BOTTOM 2.7V

≤

60µs PULSE WIDTH

Tj = 25°C

2.7V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.7V

≤

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

5.0V

4.5V

3.5V

3.3V

3.0V

2.9V

BOTTOM 2.7V

1 2 3 4 5 6

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 12A

V

GS

= 10V

IRFH3707TRPBF

IRFH3707TRPBF

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