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IRFH3707TRPBF

P1-P3P4-P6P7-P9P10-P10
IRFH3707PbF
www.irf.com 7
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 17. Gate Charge Test Circuit
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 18. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
IRFH3707PbF
8 www.irf.com
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
PQFN Package Details
IRFH3707PbF
www.irf.com 9
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P10

IRFH3707TRPBF

Mfr. #:
Buy IRFH3707TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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