052-6326 Rev D 6 - 2011
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol Parameter Ratings Unit
V
ces
Collector Emitter Voltage 600 V
I
C1
Continuous Collector Current @ T
C
= 25°C
7
121
A
I
C2
Continuous Collector Current @ T
C
= 100°C 68
I
CM
Pulsed Collector Current
1
202
V
GE
Gate-Emitter Voltage
2
±30 V
P
D
Total Power Dissipation @ T
C
= 25°C 520 W
SSOA Switching Safe Operating Area @ T
J
= 150°C 202A @ 600V
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300
Single die IGBT
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
FEATURES
• Fast switching with low EMI
• Very Low E
off
for maximum effi ciency
• Ultra low C
res
for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
APT68GA60B
APT68GA60S
600V
APT68GA60B
POWER MOS 8
®
is a high speed Punch-Through switch-mode IGBT. Low E
off
is achieved
through leading technology silicon design and lifetime control processes. A reduced E
off
-
V
CE(ON)
tradeoff results in superior effi ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C
res
/C
ies
provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Symbol Characteristic Min Typ Max Unit
R
JC
Junction to Case Thermal Resistance - - 0.24 °C/W
W
T
Package Weight - 5.9 - g
Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
in·lbf
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics T
J
= 25°C unless otherwise specifi ed
Symbol Parameter Test Conditions Min Typ Max Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage V
GE
= 0V, I
C
= 1.0mA 600
V
V
CE(on)
Collector-Emitter On Voltage
V
GE
= 15 V,
I
C
= 40A
T
J
= 25°C 2.0 2.5
T
J
= 125°C 1.9
V
GE(th)
Gate Emitter Threshold Voltage V
GE
=V
CE
, I
C
= 1mA 3 4.5 6
I
CES
Zero Gate Voltage Collector Current
V
CE
= 600V,
V
GE
= 0V
T
J
= 25°C 250
A
T
J
= 125°C 2500
I
GES
Gate-Emitter Leakage Current V
GS
= ±30V ±100 nA
TO-247
D
3
PAK
APT68GA60S