APT68GA60B

052-6326 Rev D 6 - 2011
0
5
10
15
20
25
30
0 20 40 60 80
0
50
100
150
200
250
0 10 20 30 40 50 60 70 80
0
500
1000
1500
2000
2500
3000
0 25 50 75 100 125
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50
0
500
1000
1500
2000
2500
3000
0 10 20 30 40 50 60 70 80
0
1000
2000
3000
0 10 20 30 40 50 60 70 80
0
20
40
60
80
100
120
140
160
0 10 20 30 40 50 60 70 80
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60 70 80
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.7
L = 100H
V
CE
= 400V
V
GE
= +15V
R
G
=4.7
V
CE
= 400V
T
J
= 25°C, or 125°C
R
G
= 4.7
L = 100H
V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7
R
G
= 4.7, L = 100H, V
CE
= 400V
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
R
G
= 4.7, L = 100H, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
E
on2,
80A
E
on2,
40A
E
off,
40A
E
on2,
20A
E
off,
20A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
80A
E
on2,
40A
E
off,
80A
E
off,
40A
E
on2,
20A
E
off,
20A
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t
d(ON)
, TURN-ON DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t
r
, RISE TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t
r
, FALL TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN ON ENERGY LOSS (J)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
, TURN OFF ENERGY LOSS (J)
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
E
off,
80A
Typical Performance Curves APT68GA60B_S
052-6326 Rev D 6 - 2011
Typical Performance Curves APT68GA60B_S
0
0.05
0.10
0.15
0.20
0.25
0.30
10
-5
10
-4
10
-3
10
-2
0.1 1
10
100
1000
10000
0 100 200 300 400 500
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
C
oes
C
res
C
ies
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
1000
1 10 100 800
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
052-6326 Rev D 6 - 2011
Figure 21, Turn-on Switching Waveforms and De nitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
Figure 22, Turn-off Switching Waveforms and De nitions
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
V
CC
APT30DQ60
Figure 20, Inductive Switching Test Circuit
APT68GA60B_S
D
3
PAK Package Outline
TO-247
(B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Gate
5.45 (.215) BSC
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
Collector
Emitter
Collector
Collector
Collector
Emitter
1.016 (.040)
Dimensions in Millimeters (Inches) Dimensions in Millimeters (Inches)
e1 SAC: Tin, Silver, Copper
e3 100% Sn

APT68GA60B

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 600V, TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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