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2N6034G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
2N6035/D
2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G,2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CEO
40
60
80
Vdc
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CBO
40
60
80
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Apk
Base Current I
B
100 mAdc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
320
W
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.12 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.3 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
Y = Year
WW = Work Week
2N603x = Device Code
x = 4, 5, 6, 8, 9
G = Pb−Free Package
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
2
N603xG
COLLECTOR 2, 4
BASE
3
EMITTER 1
COLLECTOR 2, 4
BASE
3
EMITTER 1
NPN PNP
2N6038 2N6034
2N6039 2N6035
2N6036
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CEO(sus)
40
60
80
−
−
−
Vdc
Collector−Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
2N6034G
(V
CE
= 60 Vdc, I
B
= 0)
2N6035G, 2N6038G
(V
CE
= 80 Vdc, I
B
= 0)
2N6036G, 2N6039G
I
CEO
−
−
−
100
100
100
mA
Collector−Cutoff Current
(V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc)
2N6034G
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc)
2N6035G, 2N6038G
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc)
2N6036G, 2N6039G
(V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125_C)
2N6034G
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125_C)
2N6035G, 2N6038G
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 125_C)
2N6036G, 2N6039G
I
CEX
−
−
−
−
−
−
100
100
100
500
500
500
mA
Collector−Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
2N6034G
(V
CB
= 60 Vdc, I
E
= 0)
2N6035G, 2N6038G
(V
CB
= 80 Vdc, I
E
= 0)
2N6036G, 2N6039G
I
CBO
−
−
−
0.5
0.5
0.5
mAdc
Emitter−Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
h
FE
500
750
100
−
15,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 8.0 mAdc)
(I
C
= 4.0 Adc, I
B
= 40 mAdc)
V
CE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 40 mAdc)
V
BE(sat)
− 4.0
Vdc
Base−Emitter On Voltage
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
V
BE(on)
− 2.8
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(I
C
= 0.75 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
|h
fe
| 25 − −
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
2N6034G, 2N6035G, 2N6036G
2N6038G, 2N6039G
C
ob
−
−
200
100
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
http://onsemi.com
3
Figure 1. Switching Times Test Circuit
4.0
0.04
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.6
0.2
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
0.4
0.8
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+8.0 V
V
1
approx
-12 V
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
≈ 8.0 k
≈ 60
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0, R
B
and R
C
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE,
NORMALIZED
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100
0
500
q
JC
(t) = r(t) q
JC
q
JC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.03 0.3 3.0 30 300
P1-P3P4-P6

2N6034G

Mfr. #:
Buy 2N6034G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 4A 40V Bipolar Power PNP
Lifecycle:
New from this manufacturer.
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