2N6034G

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
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4
ACTIVE−REGION SAFE−OPERATING AREA
1.0
5.0
Figure 4. 2N6035, 2N6036
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0 10 30 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED
70
1.0
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 150°C
dc
1.0ms
100 ms
Figure 5. 2N6038, 2N6039
0.7
0.5
0.2
20
2N6036
2N6035
0.3
1.0
5.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0 10 30 50 10070
1.0
I
C
, COLLECTOR CURRENT (AMP)
0.7
0.5
0.2
20
2N6039
2N6038
0.3
5.0ms
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100 ms
1.0ms
5.0ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
T
J
= 150°C
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
V
R
, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0 2.0 404.00.06 0.1 0.2
C, CAPACITANCE (pF)
100
50
30
T
C
= 25°C
C
ib
70
C
ob
PNP
NPN
Figure 6. Capacitance
20
6.0 10 20
6.0 k
0.04
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
300
0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
h
FE
, DC CURRENT GAIN
1.0 k
2.0 k
V
CE
= 3.0 V
0.4 2.0
PNP
2N6034, 2N6035, 2N6036
NPN
2N6038, 2N6039
4.0 k
3.0 k
T
C
= 125°C
25°C
-55°C
6.0 k
0.04
I
C
, COLLECTOR CURRENT (AMP)
300
0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
h
FE
, DC CURRENT GAIN
1.0 k
2.0 k
V
CE
= 3.0 V
0.4 2.0
4.0 k
3.0 k
T
J
= 125°C
25°C
-55°C
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
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5
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Saturation Region
3.4
0.1
I
B
, BASE CURRENT (mA)
0.6
0.2 1.0 2.0 10 100
2.2
1.8
I
C
=
0.5 A
T
J
= 25°C
1.0 A
2.6
3.0
0.5 5.0
2.2
0.04
I
C
, COLLECTOR CURRENT (AMP)
0.06 0.1 0.2 0.4 0.6 2.0 4.0
1.8
1.4
1.0
0.6
0.2
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
Figure 9. “On” Voltages
V
BE
@ V
CE
= 3.0 V
1.0
20 50
1.4
1.0
2.0 A 4.0 A
3.4
0.1
I
B
, BASE CURRENT (mA)
0.6
0.2 1.0 2.0 10 10
0
2.2
1.8
I
C
=
0.5 A
T
J
= 25°C
1.0 A
2.6
3.0
0.5 5.0 20 50
1.4
1.0
2.0 A
4.0 A
I
C
, COLLECTOR CURRENT (AMP)
2.2
0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0
1.8
1.4
1.0
0.6
0.2
V, VOLTAGE (VOLTS)
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 3.0 V
ORDERING INFORMATION
Device Package Shipping
2N6034G TO−225
(Pb−Free)
500 Units / Box
2N6035G TO−225
(Pb−Free)
500 Units / Box
2N6036G TO−225
(Pb−Free)
500 Units / Box
2N6038G TO−225
(Pb−Free)
500 Units / Box
2N6039G TO−225
(Pb−Free)
500 Units / Box
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D 10.60 11.10
E 7.40 7.80
A 2.40 3.00
b 0.60 0.90
P 2.90 3.30
L1 1.27 2.54
c 0.39 0.63
L 14.50 16.63
b2 0.51 0.88
Q 3.80 4.20
A1 1.00 1.50
e 2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
e
c
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
1
2
3
3
2
1
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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2N6035/D
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2N6034G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 4A 40V Bipolar Power PNP
Lifecycle:
New from this manufacturer.
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