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IRF5305PBF
P1-P3
P4-P6
P7-P9
IRF5305PbF
www.irf.com
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
V
GS
*
**
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14.
For P-Channel HEXFETS
IRF5305PbF
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
10/03
LEAD AS
SI
GNMEN
T
S
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B
-
1.32 (.052)
1.22 (.048)
3X
0.55 (
.022)
0.46 (
.018)
2.92 (.115
)
2.64 (.104
)
4.
69 (.
185)
4.
20 (.
165)
3X
0.
93 (.
037
)
0.
69 (.
027
)
4.06 (.
160)
3.55 (.
140)
1.
15 (.0
45)
MIN
6.
47 (.25
5)
6.
10 (.24
0)
3.78 (
.149)
3.54 (
.139)
- A -
10.54 (
.415)
10.29 (
.405)
2.
87 (.113)
2.
62 (.103)
15.24 (.
600)
14.84 (.
584)
14.
09 (.555)
13.
47 (.530)
3X
1.
40 (
.05
5
)
1.
15 (
.04
5
)
2.
54 (.
10
0
)
2X
0.36 (
.014)
M
B A M
4
1
2
3
NO
TES:
1 DI
MENSION
ING & TO
LERANCING PER ANSI
Y14.5M
, 1982.
3
OUTLIN
E CONFOR
M
S TO
JEDE
C
OUTLINE
TO-220AB.
2 CONTROLLI
NG
DIMENSI
O
N :
INCH
4
HE
ATSI
N
K & L
E
A
D MEASUREMENTS DO N
O
T
INCL
UD
E
BURRS.
HEXFET
1- GATE
2- DRAI
N
3- S
OURCE
4- DRAI
N
LEAD ASS
IGNM
ENTS
IGBT
s, CoPA
C
K
1- GAT
E
2- COL
LECTOR
3- EM
ITTER
4- COL
LECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAM
PLE
:
IN
TH
E
ASSE
M
B
LY LIN
E "C"
T
HI
S I
S AN I
R
F1010
L
OT
CODE
17
8
9
AS
SE
M
BLE
D
O
N WW
19, 199
7
PAR
T
N
UM
BER
ASS
EM
BLY
L
OT
CODE
DATE
CO
DE
Y
E
AR
7 =
19
97
LI
N
E C
WEEK 1
9
LOGO
REC
T
IFIER
IN
T
E
R
N
AT
IO
N
AL
Note
:
"P" i
n asse
mbly line
posit
ion indi
cates
"Lea
d-Fr
ee"
Note: For the most current drawings
please refer to the IR website at:
http://www.irf.com/package/
P1-P3
P4-P6
P7-P9
IRF5305PBF
Mfr. #:
Buy IRF5305PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Lifecycle:
New from this manufacturer.
Delivery:
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IRF5305PBF