DDR2 SDRAM SODIMM
MT8HTF6464HDZ – 512MB
MT8HTF12864HDZ – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• V
DD
= 1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
• Halogen-free
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
Options Marking
• Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C) D
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
T
• Package
– 200-pin DIMM (halogen-free) Z
• Frequency/CL
2
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 – 667 553 400 15 15 55
-53E PC2-4200 – – 553 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef831ec770
htf8c64_128x64hdz.pdf - Rev. E 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.