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STTH212U

P1-P3P4-P6P7-P9
Rev 1
June 2005 1/9
9
STTH212
High voltage ultrafast diode
Main product characteristics
Features and benefits
■ Low forward voltage drop
■ High reliability
■ High surge current capability
■ Soft switching for reduced EMI disturbances
■ Planar technology
Description
The STTH212, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.
Housed in axial, SMB, and SMC packages, this
diode will reduce the losses in high switching
freqency operations.
Order codes
I
F(AV)
2 A
V
RRM
1200 V
T
j
175°C
V
F
(typ)
1.0 V
t
rr
(max)
75 ns
Part Number Marking
STTH212 STTH212
STTH212RL STTH212
STTH212U U22
STTH212S S12
KA
SMB
STTH212U
SMC
STTH212S
DO-201AD
STTH212
www.st.com
1 Electrical characteristics STTH212
2/9
1 Electrical characteristics
To evaluate the conduction losses use the following equation: P = 1.26 x I
F(AV)
+ 0.12 I
F
2
(RMS)
Table 1. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
V
(RMS)
RMS voltage 850 V
I
F(AV)
Average forward current
δ = 0.5
DO-201AD
T
l
= 105°C
2ASMB
T
l
= 90°C
SMC
T
l
= 105°C
I
F(RMS)
RMS forward current DO-201AD, SMB, SMC 10 A
I
FSM
Forward surge current t
p
= 8.3ms
DO-201AD, SMB, SMC 40 A
T
stg
Storage temperature range -50 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
L = 10 mm DO-201AD 20
°C/WSMB 25
SMC 20
R
th(j-a)
Junction to ambient L = 10 mm DO-201AD 75 °C/W
Table 3. Static Electrical Characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
Reverse leakage current
T
j
= 25°C
V
R
= V
RRM
10
µA
T
j
= 125°C
100
V
F
Forward voltage drop
T
j
= 25°C
I
F
= 2A
1.75
V
T
j
= 125°C
1.07 1.50
T
j
= 150°C
1.0 -
STTH212 1 Electrical characteristics
3/9
Table 4. Dynamic Electrical Characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
t
rr
Reverse recovery
time
T
j
= 25°C I
F
= 1A dI
F
/dt = -100 A/µs V
R
=30V
75 ns
t
fr
Forward recovery
time
T
j
= 25°C
I
F
= 2A dI
F
/dt = 50 A/µs
V
FR
= 1.1 x V
Fmax
500 ns
V
FP
Forward recovery
voltage
30 V
Figure 1. Conduction losses versus average
forward current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
L
Leads
= 10mm)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
CU
=1cm
2
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
T
δ
=tp/T
tp
I (A)
F(AV)
P(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
DO-201AD
L
leads
=10mm
Z
th(j-a)
/R
th(j-a)
t
p
(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
SMB
S
Cu
=1cm²
Z
th(j-a)
/R
th(j-a)
t
p
(s)
P1-P3P4-P6P7-P9

STTH212U

Mfr. #:
Buy STTH212U
Manufacturer:
STMicroelectronics
Description:
Rectifiers high voltage diode
Lifecycle:
New from this manufacturer.
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