1 Electrical characteristics STTH212
4/9
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
CU
=1cm
2
)
Figure 6. Reverse recovery current versus
dI
F
/dt (typical values)
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 9. Softness factor versus dI
F
/dt
(typical values)
Figure 10. Relative variations of dynamic
parameters versus junction
temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
SMC
S
Cu
=1cm²
Z
th(j-a)
/R
th(j-a)
t
p
(s)
0
1
2
3
4
5
6
7
8
9
10
11
0 20 40 60 80 100 120 140 160 180 200
V
R
=600V
T
j
=125°C
I
F
=2 x I
F(AV )
I
F
=2 x I
F(AV )
I
F
=0.5 xI
F(AV
)
I
F
=0.5 xI
F(AV
)
I
F
=I
F(AV )
I
F
=I
F(AV )
I (A)
RM
dl /dt(A/µs)
F
0
100
200
300
400
500
600
700
800
900
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
=0.5 x I
F(AV)
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=I
F(AV)
t
rr
(ns)
dl /dt(A/µs)
F
0
200
400
600
800
1000
1200
1400
0 50 100 150 200 250 300 350 400 450 500
Q
rr
(nC)
V
R
=600V
T
j
=125°C
I
F
=I
F(AV )
I
F
=0.5 x I
F(AV )
I
F
=2 x I
F(AV )
dl /dt(A/µs)
F
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0 25 50 75 100 125 150 175 200 225 250
S
FACTOR
I
F
=I
F(AV )
V
R
=600V
T
j
=125°C
dl /dt(A/µs)
F
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
25 50 75 100 125
T
j
(°C)
I
RM
Q
RR
S
FA C TO R
I
F
=I
F(AV )
V
R
=600V
Reference:T
j
=125°C
