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STP11NM60FDFP

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
July 2006 Rev 9 1/17
17
STB11NM60FD - STB11NM60FD-1
STP11NM60FD - STP11NM60FDFP
N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D
2
PAK/I
2
PA K
FDmesh™ Power MOSFET (with fast diode)
General features
■ 100% avalanche tested
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB11NM60FD 600V <0.45Ω 11A
STB11NM60FD-1 600V <0.45Ω 11A
STP11NM60FD 600V <0.45Ω 11A
STP11NM60FDFP 600V <0.45Ω 11A
TO-220
TO-220FP
D²PAK
I²PAK
D²PAK
1
2
3
1
2
3
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB11NM60FD B11NM60FD D²PAK Tape & reel
STB11NM60FD-1 B11NM60FD I²PAK Tube
STP11NM60FD P11NM60FD TO-220 Tube
STP11NM60FDFP P11NM60FDFP TO-220FP Tube
Contents STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical ratings
3/17
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value Unit
TO-220/
D² PAK /I²PAK
TO-220FP
V
DS
Drain-source voltage (v
gs
= 0) 600 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ) 600 V
V
GS
Gate- source voltage ±30 V
I
D
Drain current (continuos) at T
C
= 25°C 11 11
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuos) at T
C
= 100°C 7 7
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 44 44
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 160 35 W
Derating factor 0.88 0.28 W/°C
dv/dt
(3)
3. I
SD
<11A, di/dt<400A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 20 V/ns
V
ISO
Insulation winthstand voltage (dc) -- 2500 V
T
stg
Storage temperature –65 to 150 °C
Table 2. Thermal resistance
Symbol Parameter
Value
Unit
TO-220
D²PAK/I²PAK
TO-220FP
R
thj-case
Thermal resistance junction-case Max 0.78 3.57 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche data
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
5.5 A
E
AS
Single pulse avalanche energy
(starting Tj = 25°C, I
D
= I
AR
, V
DD
= 35V)
350 mJ
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STP11NM60FDFP

Mfr. #:
Buy STP11NM60FDFP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 600 Volt 11 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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