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STP11NM60FDFP

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
4/17
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 1 µA
V
DS
=Max rating, T
C
=125°C 100 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±30V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 3 4 5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 5.5A 0.40 0.45 W
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=5.5A
5.2 S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
900 pF
C
oss
Output capacitance 350 pF
C
rss
Reverse transfer
capacitance
35 pF
C
oss eq
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to
400V
100 pF
R
G
Gate input resistance
f=1 MHz Gate DC Bias= 0
test signal level = 20mV
open drain
3 Ω
Q
g
Total gate charge
V
DD
= 400V, I
D
= 11A,
V
GS
= 10V
(see Figure 15)
28 40 nC
Q
gs
Gate-source charge 7.8 nC
Q
gd
Gate-drain charge 13 nC
STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics
5/17
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 250V, I
D
= 5.5A
R
G
=4.7Ω V
GS
= 10V
(see Figure 14)
20
16
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 400V, I
D
= 11A,
R
G
=4.7Ω, V
GS
= 10V
(see Figure 16)
10
15
24
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 11 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) 44 A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 11A, V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 11A, V
DD
= 50V
di/dt = 100A/µs,
(see Figure 19)
140
680
A
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 11A, V
DD
= 50V
di/dt = 100A/µs,
Tj=150°C
(see Figure 19)
260
1600
13
ns
nC
A
Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
6/17
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics Figure 6. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STP11NM60FDFP

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Buy STP11NM60FDFP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 600 Volt 11 Amp
Lifecycle:
New from this manufacturer.
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