IRF7421D1PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 — — V V
GS
= 0V, I
D
= 250µA
R
DS(on)
Static Drain-to-Source On-Resistance — 0.026 0.035 V
GS
= 10V, I
D
= 4.1A
— 0.040 0.060 V
GS
= 4.5V, I
D
= 2.1A
V
GS(th)
Gate Threshold Voltage 1.0 — — V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 4.6 — — S V
DS
= 15V, I
D
= 2.1A
I
DSS
Drain-to-Source Leakage Current — — 1.0 V
DS
= 24V, V
GS
= 0V
——25 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage — — -100 V
GS
= -20V
Gate-to-Source Reverse Leakage — — 100 V
GS
= 20V
Q
g
Total Gate Charge — 18 27 I
D
= 4.1A
Q
gs
Gate-to-Source Charge — 2.2 3.3 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge — 5.9 8.9 V
GS
= 10V (see figure 10) Â
t
d(on)
Turn-On Delay Time — 6.7 — V
DD
= 15V
t
r
Rise Time — 27 — I
D
= 4.1A
t
d(off)
Turn-Off Delay Time — 20 — R
G
= 6.2Ω
t
f
Fall Time — 16 — R
D
= 3.7Ω Â
C
iss
Input Capacitance — 510 — V
GS
= 0V
C
oss
Output Capacitance — 200 — pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance — 84 — ƒ = 1.0MHz (see figure 9)
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current (Body Diode) — — 3.1 A
I
SM
Pulsed Source Current (Body Diode) — — 33
V
SD
Body Diode Forward Voltage — — 1.0 V T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode) — 57 86 ns T
J
= 25°C, I
F
= 4.1A
Q
rr
Reverse Recovery Charge — 93 140 nC di/dt = 100A/µs
Â
MOSFET Source-Drain Ratings and Characteristics
2
Parameter Max. Units. Conditions
I
F(av)
Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, T
A
= 25°C
1.2 T
A
= 70°C
I
SM
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
V
FM
Max. Forward voltage drop 0.50 I
F
= 1.0A, T
J
= 25°C
0.62 I
F
= 2.0A, T
J
= 25°C
0.39 I
F
= 1.0A, T
J
= 125°C
0.57 I
F
= 2.0A, T
J
= 125°C .
I
RM
Max. Reverse Leakage current 0.06 V
R
= 30V T
J
= 25°C
16 T
J
= 125°C
C
t
Max. Junction Capacitance 110 pF V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
R
Schottky Diode Electrical Specifications
V
mA
