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IRF7421D1TRPBF

P1-P3P4-P6P7-P8
IRF7421D1PbF
4 www.irf.com
R
DS
(on) , Drain-to-Source On Resistance (Ω)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.1A
D
0.1
1
10
100
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
100µs
1ms
10ms
A
A
J
IRF7421D1PbF
www.irf.com 5
Power Mosfet Characteristics
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
V = 24V
V = 15V
DS
DS
I = 4.1A
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7421D1PbF
6 www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
Reverse Current - I
R
(mA)
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
10
100
1000
0102030
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
A
P1-P3P4-P6P7-P8

IRF7421D1TRPBF

Mfr. #:
Buy IRF7421D1TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC
Lifecycle:
New from this manufacturer.
Delivery:
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