MMA8491Q
Sensors
Freescale Semiconductor, Inc. 7
2 Mechanical and Electrical Specifications
2.1 Absolute maximum ratings
Table 2. Maximum ratings
Rating Symbol Value Unit
Maximum acceleration (all axes, 100 μs)
g
max
10,000 g
Analog supply voltage
V
DD
-0.3 to +3.6 V
Drop test
D
drop
1.8 m
Operation temperature range
T
AGOC
-40 to +85 °C
Storage temperature range
T
stg
-40 to +125 °C
Table 3. ESD and LATCHUP protection characteristics
Rating Symbol Value Unit
Human body model
HBM ±2000 V
Machine model
MM ±200 V
Charge device model
CDM ±500 V
Latchup current at T
A
= 85°C
±100 mA
MMA8491Q
Sensors
8 Freescale Semiconductor, Inc.
2.2 Mechanical characteristics
Mechanical characteristics are at V
DD
= 2.8V, T
A
= +25°C, unless otherwise noted
(8) (10)
.
1. Parameters tested 100% at final test at room temperature.
2. Verified by characterization; not tested in production.
3. Before board mount.
4. Post-board mount offset specifications are based on a 4-layer PCB, relative to 25°C.
5. All angles are based on the trip angle from static 0g to 1g; the g-values are calculated from the trip angle.
6. Evaluation data: not tested in production.
7. Guaranteed by design.
8. Typical number is the target number, unless otherwise specified.
9. Typical number is mean data.
10.All numbers are based on V
DD
cap = 4.7 μF.
Table 4. Mechanical characteristics
Parameter Symbol Conditions Min Typ Max Unit
Full-scale measurement range
(2)
FS ±8 g
Sensitivity
(1)
So 973 1024 1075 counts/g
Calibrated sensitivity error
(1)
CSE All axes, all ranges -5 5 %
Cross-axis sensitivity
(2)
CX
SEN
Die rotation included -4.2 4.2 %
Sensitivity temperature variation
(2)
TCS -40°C to +85°C -0.014 0.014 %/°C
Zero-g level temperature variation
(2)
TCO -40°C to +85°C -0.98 0.98 mg/°C
Zero-g level offset accuracy
(1) (3)
TyOff -100 100 mg
Zero-g level after board mount
(2) (4)
TyOffPBM -120 120 mg
Noise
(2)
RMS 11.5
(9)
18 mg-rms
Nonlinearity
(2)
NL 1%FS
Threshold / g-value
(5)
TDL
Internal threshold of output level
change (from 0g reference) , g
values are calculated from trip
angles
25°C 0.583 0.688 0.780
g
-40°C to +85°C 0.577 0.688 0.784
Threshold / Tilt angle
(2) (4) (5)
TDL
Internal threshold of output level
change (from 0g reference)
25°C 35.6 43.5 51.3
degrees
-40°C to +85°C 35.2 43.5 51.7
Temperature range
(2)
T
AGOC
-40 25 85 °C
MMA8491Q
Sensors
Freescale Semiconductor, Inc. 9
2.3 Electrical characteristics
Electrical characteristics are at V
DD
= 2.8V, T
A
= +25°C, unless otherwise noted.
(8) (13)
1. Parameters tested 100% at final test at room temperature.
2. Verified by characterization; not tested in production.
3. Before board mount.
4. Post-board mount offset specifications are based on a 4-layer PCB, relative to 25°C.
5. All angles are based on the trip angle from static 0g to 1g; the g-values are calculated from the trip angle.
6. Evaluation data: not tested in production.
7. Guaranteed by design.
8. Typical number is the target number unless otherwise specified.
9. Typical number is mean data.
10.Data is based on typical bypass cap = 100 nF.
11.Data is based on max bypass cap = 470 nF.
12.Over temperature -40°C to 85°C.
13.All numbers are based on V
DD
cap = 4.7 μF.
14.For application connection, see Figure 5 on page 6.
Table 5. Electrical characteristics
Parameter Symbol Conditions Min Typ Max Unit
Supply voltage
(2)
V
DD
1.95 2.8 3.6 V
Supply current in one-shot mode
I
dd
V
DD
= 2.8V,
EN is pulsed to V
DD
for 1 ms
400
(6) (9) (10)
980
(2) (11) (12)
nA/Hz
Supply current in shutdown
mode
I
sd
V
DD
= 2.8V, EN = 0 1.8
(6) (9)
68
(2) (12)
nA
Bypass capacitor at Byp pin
(6)
C
byp
70 100 470 nF
High level output voltage
(2)
Xout, Yout, Zout
V
oh
I
o
= 500 µA 0.85 * V
DD
V
Low level output voltage
(2)
Xout, Yout, Zout
V
ol
I
o
= 500 µA 0.15 * V
DD
V
High level input voltage
(2)
EN
V
ih
V
DD
= 2.8V 0.85 * V
DD
V
Low level input voltage
(2)
EN
V
il
V
DD
= 2.8V 0.15 * V
DD
V
Low level output voltage
(7)
SDA
V
ols
I
o
= 3 mA 0.4 V
High level input voltage
(7)
SDA, SCL
V
ih
V
DD
= 2.8V
0.7 * V
DD
V
Low level input voltage
(7)
SDA, SCL
V
il
V
DD
= 2.8V 0.3* V
DD
V
Output source current
(2)
Xout, Yout, Zout
I
source
Voltage high level V
out
= 0.85 x V
DD
,
V
DD
= 2.8V
7.3 mA
Output sink current
(2)
Xout, Yout, Zout
I
sink
Voltage low level V
out
= 0.15 x V
DD
,
V
DD
= 2.8V
8.9 mA
Turn-on time
(14)
T
on /
T
active
Measured from the time EN = 1.95V
to valid outputs
720
(6) (9) (10)
900
(2) (11) (12)
µs
Reset Time
(7)
T
rst
V
DD
= 2.8V, the time between falling
edge of EN and next rising edge of EN
1000 µs
Temperature range
(2)
T
AGOC
-40 25 85 °C

MMA8491QR1

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ACCELEROMETER 8G I2C 12QFN
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